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Thin Solid Films

Volumn 163, Issue C, 1988, Pages 123-130

Deposition mechanism of hydrogenated amorphous SiGe Films

(2) Tanaka, K a Matsuda, A a

a ELECTROTECHNICAL LABORATORY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; HYDROGEN; PLASMAS; PROBABILITY; SILICON GERMANIUM ALLOYS - THIN FILMS;

DARK CONDUCTIVITIES; OPTICAL BAND GAPS;

SEMICONDUCTING SILICON;

EID: 0024070486 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/0040-6090(88)90417-8 Document Type: Article

Times cited : (11)

References (9)

1
- 0019682614
- Amorphous SiGe: H for High Performance Solar Cells
- (1981) Japanese Journal of Applied Physics , vol.20 , pp. 291
- Nakamura¹ Sato² Yukimoto³ Shirahata⁴ Maruhashi⁵ Fujiwara⁶

2
- 0023399574
- Glow-discharge amorphous silicon: Growth process and structure
- and references cited therein
- (1987) Materials Science Reports , vol.2 , pp. 141
- Tanaka¹ Matsuda²

3
- 84919154543
- Praha, to be published
- (1987) Proc. 12th Int. Conf. on Amorphous and Liquid Semiconductors
- Matsuda¹ Tanaka²

4
- 84919154542
- Praha, to be published
- (1987) Proc. 12th Int. Conf. on Amorphous and Liquid Semiconductors
- Aljishi¹ Chu² Smith³ Shen⁴ Conde⁵ Slobodin⁶ Kolodzey⁷ Wagner⁸

5
- 84919154541
- Praha, to be published
- (1987) Proc. 12th Int. Conf. on Amorphous and Liquid Semiconductors
- Perrin¹

6
- 3342905713
- Vacuum ultraviolet absorption cross sections of SiH4, GeH4, Si2H6, and Si3H8
- (1986) The Journal of Chemical Physics , vol.85 , pp. 4867
- Ito¹ Toyoshima² Onuki³ Washida⁴ Ibuki⁵

7
- 0004168979
- F. Yonezawa, Springer, Berlin
- (1981) Fundamental Physics of Amorphous Semiconductors , pp. 87
- Lucovsky¹

8
- 0003428285
- McGraw-Hill
- (1972) American Institute of Physics Handbook , pp. 7-169

9
- 84919154540
- Praha, to be published
- (1987) Proc. 12th Int. Conf. on Amorphous and Liquid Semiconductors
- Shimizu¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.