Surface Emitting Semiconductor Lasers

IEEE Journal of Quantum Electronics

Volumn 24, Issue 9, 1988, Pages 1845-1855

  Iga, Kenichi ^a   Koyama, Fumio ^a   Kinoshita, Susumu ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE -- APPLICATIONS; SEMICONDUCTING GALLIUM COMPOUNDS -- APPLICATIONS; SEMICONDUCTING INDIUM COMPOUNDS -- APPLICATIONS;

GALLIUM ALUMINUM ARSENIDE; GALLIUM INDIUM ARSENIDE PHOSPHIDE; INDIUM PHOSPHIDE; SURFACE EMITTING SEMICONDUCTOR LASER;

LASERS, SEMICONDUCTOR;

EID: 0024069478     PISSN: 00189197     EISSN: 15581713     Source Type: Journal    
DOI: 10.1109/3.7126     Document Type: Article

References (43)

1. I. Melngailis, “Longitudinal injection-plasma laser of InSb,” Appl. Phys. Lett., vol. 6, pp. 59–60, Feb. 1965.
2. H. Soda, K. Iga, C. Kitahara, and Y. Suematsu, “GalnAsP/InP surface emitting injection lasers,” Japan. J. Appl. Phys., vol. 18, pp. 2329–2330, Dec. 1979.
3. H. Okuda, H. Soda, K. Moriki, Y. Motegi, and K. Iga, “Ga-InAsP/InP surface emitting injection laser with buried heterostructures,” Japan. J. Appl. Phys., vol. 20, pp. L563-L566, Aug. 1981.
4. Y. Motegi, H. Soda, and K. Iga, “Surface emitting GalnAsP/InP injection laser with short cavity length,” Electron. Lett., vol. 18, pp. 461–463, 1982.
5. K. Iga, H. Soda, T. Terakado, and S. Shimizu, “Lasing characteristics of improved GalnAsP/InP surface emitting injection lasers,” Electron. Lett., vol. 19, pp. 457–458, 1983.
6. H. Soda, Y. Motegi, and K. Iga, “GalnAsP/InP surface emitting injection lasers with short cavity length,” IEEE J. Quantum Electron., vol. QE-19, pp. 1035–1041, June 1983.
7. S. Uchiyama and K. Iga, “GalnAsP/InP surface emitting injection laser with a ring electrode,” IEEE J. Quantum Electron., vol. QE-20, pp. 1117–1118, 1984.
8. S. Uchiyama and K. Iga, “Temperature dependence of the threshold of GalnAsP/InP surface emitting junction laser,” Appl. Phys. Lett., vol. 46, pp. 930–932, May 1985.
9. A. Chailertvanitkul, K. Iga, and K. Moriki, “GalnAsP/InP surface emitting laser (λ = 1.4 üm) with heteromultilayer Bragg reflector,” Electron Lett., vol. 21, pp. 303–304, Mar. 1985.
10. S. Uchiyama and K. Iga, “Consideration on threshold current density of GalnAsP/InP surface emitting junction lasers,” IEEE J. Quantum Electron., vol. QE-22, pp. 302–309, Feb. 1986.
11. S. Uchiyama and K. Iga, “Low threshold GalnAsP/InP surface emitting laser,” Trans. IECE Japan, vol. E69, pp. 587–588, May 1986.
12. S. Uchiyama, Y. Ohmae, S. Shimizu, and K. Iga, “GalnAsP/InP surface emitting lasers with current confining structure,” J. Lightwave Tech., vol. LT-4, pp. 846–851, July 1986.
13. A. Ibaraki, S. Ishikawa, S. Ohkouchi, and K. Iga, “Trial fabrication of GaAlAs/GaAs surface-emitting injection laser,” Japan. J. Appl. Phys., vol. 23, pp. 781–782, June 1984.
14. A. Ibaraki, S. Ishikawa, S. Ohkouchi, and K. Iga, “Pulsed oscillation of GaAlAs/GaAs surface-emitting injection laser,” Electron. Lett., vol. 20, pp. 420–422, May 1984.
15. K. Iga, S. Ishikawa, S. Ohkouchi, and T. Nishimura, “Room temperature pulsed oscillation of GaAlAs/GaAs surface emitting injection laser,” Appl. Phys. Lett., vol. 45, pp. 348–350, Aug. 1984.
16. S. Kinoshita, T. Kobayashi, T. Sakaguchi, T. Odagawa, and K. Iga, “Room temperature pulse operation of GaAs surface emitting laser by using TiO2/SiO2 dielectric multilayer reflector,” Trans. IECE Japan, vol. J69-C, pp. 412–420, Apr. 1986.
17. S. Kinoshita, T. Odagawa, T. Sakaguchi, and K. Iga, “Low threshold circular buried heterostructure (CBH) GaAlAs/GaAs surface emitting laser,” in Proc. 10th IEEE Int. Semiconduct. Laser Conf., paper H-2, 1986, pp. 106–107.
18. K. Iga, S. Kinoshita, and F. Koyama, “Microcavity GaAlAs/GaAs surface emitting laser with Ith = 6 mA,” in Proc. 10th Semiconduct. Laser Conf., paper PD-4, 1986, p. 12.
19. S. Kinoshita, T. Sakaguchi, T. Odagawa, and K. Iga, “GaAlAs/GaAs surface emitting laser with high reflective TiO2/SiO2 multilayer Bragg reflector,” Japan. J. Appl. Phys., vol. 26, pp. 410–415, Mar. 1987.
20. S. Kinoshita and K. Iga, “Circular buried heterostructure (CBH) GaAlAs/GaAs surface emitting lasers,” IEEE J. Quantum Electron., vol. QE-23, pp. 882–888, June 1987.
21. F.K. Reinhart and R.A. Logan, “GaAs-AlGaAs double heterostructure lasers with taper-coupled passive waveguides,” Appl. Phys. Lett., vol. 26, pp. 516–517, 1975.
22. G.A. Evans, J.M. Hammer, N.W. Carlson, F.R. Elia, E.A. James, and J.B. Kirk, “Grating surface emitting laser with dynamic wavelength stabilization and far field angle of 0.25 degrees,” presented at CLE0′86, 1986, postdeadline paper ThU3.
23. A.J. SpringThorpe, “A nobel double-heterostructure p-n-junction laser,” Appl. Phys. Lett., vol. 31, pp. 524–525, 1977.
24. Z.L. Liau and J.N. Walpole, “Surface-emitting GalnAsP/InP laser with low threshold current and high efficiency,” Appl. Phys. Lett., vol. 46, pp. 115–117, 1985.
25. M.C. Wu, M. Ogura, W. Hsin, J.R. Whinnery, and S. Wang, “Surface emitting laser diode with bent double heterostructure,” presented at CLEO′87, May 1987, paper WG4.
26. T. Yuasa, N. Hamano, M. Sugimoto, N. Takado, M. Ueno, H. Iwata, Y. Tashiro, K. Onabe, and K. Asakawa, “Surface emitting GaAs/GaAlAs multiquantum well lasers with optical bistability,” presented at CLEO′88, Apr. 1988, paper W06.
27. M. Ogura, T. Hata, and T. Yao, “Distributed feedback surface emitting laser diode with multilayered heterostructure,” Japan. J. Appl. Phys., vol. 23, pp. L512-L514, 1984.
28. K. Iga, M. Oikawa, S. Misawa, J. Banno, and Y. Kokubun, “Stacked planar optics; an application of the planar microlens,” Appl. Opt., vol. 21, pp. 3456–3460, 1982.
29. K. Moriki, H. Nakahara, K. Hattori, and K. Iga. “Single transverse mode condition of surface emitting injection lasers,” Trans. IEICE Japan, vol. J70-C, pp. 501–509, Apr. 1987.
30. R.C. Goodfellow, A.C. Carter, G.J. Rees, and R. Davis, “Radiance saturation in small-area GalnAsP/InP and GaAlAs/GaAs LED's,” IEEE Trans. Electron Devices, vol. ED-28, pp. 365–371, 1981.
31. Y. Suematsu and K. Furuya, “Theoretical spontaneous emission factor of injection lasers,” Trans. IECE Japan, vol. E-60, pp. 467–472, Sept. 1977.
32. Y. Suematsu, S. Arai, and K. Kishino, “Dynamic single mode semiconductor laser with a distributed reflector,” J. Lightwave. Tech, vol. LT-1, pp. 161–176, Mar. 1983.
33. S. Kinoshita, F. Koyama, and K. Iga, “Investigation of the CW operation at room temperature for GaAlAs/GaAs surface emitting laser,” in Proc. Tech. Group Meet., IECE Japan, 1987, paper OQE86–188.
34. I. Watanabe, F. Koyama, and K. Iga, “GalnAsP/InP CBH surface-emitting laser with a dielectric multilayer reflector,” Japan. J. Appl. Phys., vol. 16, no. 7, pp. 1598–1599, Sept. 1987.
35. S. Arai, M. Asada, Y. Suematsu, Y. Itaya, T. Tanbun-ek, and K. Kishino, “New 1.6 üm wavelength GalnAsP/InP buried heterostructure lasers,” Electron. Lett., vol. 16, pp. 349–350, 1980.
36. K. Kishino, S. Kinoshita, S. Konno, and T. Tako, “Selective melt-backed substrate inner-stripe AlGaAs/GaAs lasers operated under room temperature CW condition,” Japan. J. Appl. Phys., vol. 22, pp. L473-L475, 1983.
37. F. Koyama, H. Uenohara, T. Sakaguchi, and K. Iga, “GaAlAs/GaAs MOCVD growth for surface emitting laser,” Japan. J. Appl. Phys., vol. 26, pp. 1077–1081, July 1987.
38. F. Koyama, K. Tomomatsu and K. Iga, “GaAs surface emitting lasers with circular buried heterostructure grown by MOCVD metalorganic chemical vapor deposition and twodimensional laser array,” Appl. Phys. Lett., vol. 52, pp. 528–529, Feb. 1988.
39. F. Koyama and K. Iga, “Single longitudinal mode operation of directly modulated GaAlAs/GaAs surface emitting lasers,” Trans. IEECE Japan, vol. E70, pp. 455–457, 1987.
40. S. Uchiyama and K. Iga, “twodimensional array of GalnAsP/InP surface-emitting lasers,” Electron. Lett., vol. 21, pp. 162–164, 1985.
41. T. Sakaguchi, F. Koyama, and K. Iga, “GaAlAs/AlAs DBR surface emitting laser grown by MOCVD,” presented at Spring Meet. Japan Soc. Appl. Phys., Mar. 1988, paper 30a-ZP-5.
42. S. Uchiyama, K. Iga, and Y. Kokubun, “Threshold gain of distributed surface emitting lasers,” in Proc. 12th Euro. Conf. Opt. Commun., Sept. 1986, pp. 37–40.
43. K. Iga, Y. Suematsu, K. Kishino, and H. Soda, Japanese Patent 55–508, 1980.