Laser-Induced Diode Linking for Wafer-Scale Integration

IEEE Transactions on Electron Devices

Volumn 35, Issue 9, 1988, Pages 1533-1550

  Cohen, Simon S ^a   Wyatt, Peter W ^a   Chapman, Glenn H ^a   Canter, Joseph M ^a  

^a MIT LINCOLN LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LASER BEAMS -- APPLICATIONS; SEMICONDUCTING SILICON -- RADIATION EFFECTS;

LASER BEAM MELTING OF SILICON; LINKING ADJACENT DIODES; WAFER SCALE INTEGRATION;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0024068772     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.2588     Document Type: Article

References (50)

1. A. Antonenko, N. N. Gerasimenko, A. Bvarechenskii, L. A. Smir-nov, and G. M. Tseitlin, Sov. Phys.—Semicond., vol. 10, p. 81, 1976.
2. G. A. Kachurin, E. V. Nadaev, A. V. Khodyachikh, and L. A. Ko-valeva, Sov. Phys.—Semicond., vol. 10, p. 1128, 1976.
3. M. von Allmen, W. Luthy, and K. Affolter, Appl. Phys. Lett., vol. 33, p. 824, 1978.
4. Semiconductor and Semimetals, vol. 17, J. F. Gibbons, Ed. Orlando, FL: Academic, 1984.
5. Semiconductor and Semimetals, vol. 23, R. F. Wood, C. W. White, and R. T. Young, Eds. Orlando, FL: Academic, 1984.
6. K. Nishiyama, M. Arai, and N. Watanabe, Japan. J. App. Phys., vol. 19, p. 10, 1980.
7. K. F. Lee, J. F. Gibbons, K. C. Saraswat, and T. Kamins, Appl. Phys. Lett., vol. 35, p. 173, 1979.
8. S. L. Garverick and E. A. Pierce, in IEEE Proc. Custom IC Conf., p. 244, May 1983.
9. J. I. Raffel, A. H. Anderson, G. H. Chapman, K. H. Konkle, B. Mathur, A. M. Soares, and P. W. Wyatt, IEEE J. Solid-State Circuits, vol. SD-20, p. 399, 1985.
10. S. E. Schuster and P. W. Cook, Industrial Applications of High Power Laser Technology, SPIE, vol. 86, p. 102, 1976.
11. J. C. Logue, W. J. Kleinfelder, P. Lowy, J. R. Moulic, and W. W. Wu, in Proc. IEEE Int. Conf. Circuits and Computers (Port Chester, NY), p. 248, 1980.
12. P. W. Cook, S. E. Schuster, and R. J. von Gutfeld, Appl. Phys. Lett., vol. 26, p. 125, 1975.
13. C. Jesshope and W. Moore, Eds., Wafer Scale Integration. Bristol, England: Adam Hilger, 1986.
14. G. Saucier and J. Trilhe, Eds., Wafer Scale Integration. Amsterdam: North-Holland, 1986.
15. Proc. I.F.I.P. Int. Workshop Wafer-Scale Integration (Brunei University, England, Sept. 23-25, 1987), to be published.
16. H. S. Carslaw and T. C. Jaeger, Conduction of Heat in Solids. Oxford: Oxford University Press, 1959.
17. H. E. Cline and T. R. Anthony, J. Appl. Phys., vol. 48, p. 3895, 1977.
18. M. Lax, J. Appl. Phys., vol. 48, p. 3919 (1977); Appl. Phys. Lett., vol. 33, p. 786, 1978.
19. Y. I. Nissim, A. Lietoila, R. B. Gold, and J. F. Gibbons, J. Appl. Phys., vol. 51, p. 274, 1980.
20. A. Kokorowski, G. L. Olson, and L. D. Hess, in Laser and Electron-Beam Solid Interactions and Materials Processing, Proc. Ann. MRS Meeting, J. F. Gibbons, L. D. Hess, and T. W. Sigmon, Eds. New York: North Holland, 1980, p. 139.
21. M. L. Burgener and R. E. Reedy, J. Appl. Phys., vol. 53, p. 4357, 1982.
22. J. E. Moody and R. H. Hendel, J. Appl. Phys., vol. 53, p. 4364, 1982.
23. I. D. Calder and R. Sue, J. Appl. Phys., vol. 53, p. 7545, 1982.
24. I. Chen and S. Lee, J. Appl. Phys., vol. 54, p. 1062, 1983.
25. F. Ferrieu and G. Auvert, J. Appl. Phys., vol. 54, p. 2646, 1983.
26. P. Schvan and R. E. Thomas, J. Appl. Phys., vol. 57, p. 4738, 1985.
27. S. D. Allen, J. A. Goldstone, J. P. Stone, and R. Y. Yan, J. Appl. Phys., vol. 59, p. 1653, 1986.
28. D. Waechter, P. Schvan, R. E. Thomas, and N. G. Tarr, J. Appl. Phys., vol. 59, p. 3371, 1986.
29. V. N. Abakumov, V. N. Guman, and V. S. Yuferev, Sov. Phys.— Semicond., vol. 20, p. 1386, 1986.
30. C. P. Grigoropoulos and R. H. Buckholz, J. Appl. Phys., vol. 60, p. 2304, 1986.
31. E. Abraham and J. M. Halley, J. Appl. Phys., vol. A42, p. 279, 1987.
32. G. E. Jellison and F. A. Modine, Appl. Phys. Lett., vol. 41, p. 180, 1982.
33. V. M. Glazov, S. N. Chizhevskaya, and N. N. Glagoleva, Liquid Semiconductors. New York: Plenum, 1969.
34. C. Kittel, Introduction Solid State Physics. New York: Wiley, 1971.
35. M. Born and E. Wolf, Principles of Optics. New York: Pergamon, 1959.
36. G. E. Jellison, Jr., in Semiconductors and Semimetals, vol. 23, R. F. Wood, C. W. White, and R. T. Young, Eds. Orlando, FL: Academic, 1984, ch. 3.
37. O. Ruff and M. Z. Konschak, Electrochem., vol. 32, p. 515, 1926.
38. E. Baur and R. Brunner, Helv. Chim. Acta, vol. 17, 958, 1934.
39. D. S. Gates and G. Thodos, AIChE J., vol. 6, p. 50, 1960.
40. R. E. Honig, RCA Rev., vol. 23, p. 567, 1962.
41. W. R. Runyan, Silicon Semiconductor Technology. New York: McGraw-Hill, 1965.
42. S. Ohe, Computer Aided Data Book of Vapor Pressure. Tokyo: Data Book Publishing Co., 1976.
43. D. R. Stull and H. Prophet, JANAF Thermochemical Tables, MSRDS-NBS37, Nat. Bureau of Standards, Washington, DC, 1971.
44. C. L. Yaws, R. Lutwak, L. L. Dickens, and G. Hsu, Solid State Technol., Jan. 1981.
45. F. A. Trumbore, Bell Syst. Tech. J., vol. 39, p. 205, 1960.
46. J. C. Wang, R. F. Wood, and P. P. Pronko, Appl. Phys. Lett., vol. 33, p. 455, 1978.
47. R. F. Wood and G. E. Jellison, Jr., in Semiconductor and Semimetals, vol. 23, R. F. Wood, C. W. White, and R. T. Young, Eds. Orlando, FL: Academic, 1984, ch. 4.
48. H. F. Wolf, Silicon Semiconductor Data. New York: Pergamon, 1969.
49. H. Kodera, Japan. J. Appl. Phys., vol. 2, p. 212, 1963.
50. Y. M. Shashkov and V. M. Gurevich, Russ. J. Phys. Chem., vol. 42, p. 1082, 1968.