Initial oxidation process of anodized porous silicon with hydrogen atoms chemisorbed on the inner surface

Japanese Journal of Applied Physics

Volumn 27, Issue 8 A, 1988, Pages L1406-L1409

  Kato, Yoshihisa ^a   Ito, Toshimichi ^a   Hiraki, Akio ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Deal Grove relation; Diffusion limited process; Hydrogen atoms; Infrared spectroscopy; Initial oxidation process; Porous silicon; Si H stretching band absorption

Indexed keywords

HYDROGEN; SPECTROSCOPY, INFRARED;

DEAL-GROVE RELATION; DIFFUSION-LIMITED PROCESS;

SEMICONDUCTING SILICON;

EID: 0024056627     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.27.L1406     Document Type: Article

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