Measurement of the SiH3 Radical Density in Silane Plasma using Infrared Diode Laser Absorption Spectroscopy

Japanese Journal of Applied Physics

Volumn 27, Issue 8 A, 1988, Pages L1565-L1567

  Itabashi, Naoshi ^a   Kato, Kozo ^a   Nishiwaki, Nobuki ^a   Goto, Toshio ^a   Yamada, Chikashi ^a,b   Hirota, Eizi ^a,b  

^a NAGOYA UNIVERSITY   (Japan)

^b INSTITUTE FOR MOLECULAR SCIENCE   (Japan)

Author keywords

Amorphous silicon thin film; Infrared diode laser absorption spectroscopy; SiH3 radical density; Silane plasma; Transient absorption method

Indexed keywords

SEMICONDUCTING SILICON - THIN FILMS; SILANES; SPECTROSCOPY, INFRARED - LASER APPLICATIONS;

SILANE PLASMA; TRANSIENT ABSORPTION METHOD;

SILICON COMPOUNDS;

EID: 0024054593     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.27.L1565     Document Type: Article

References (9)

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9. G. Herzberg: Molecular Spectra and Molecular Structure II (D. Van Nostrand Company Inc, Princeton, 1945) p. 421; AKJ in this reference is equal to S(J 'K'>J "K")/(2J " +1).