Observation of Mobility Enhancement in Ultrathin Soi Mosfets

Electronics Letters

Volumn 24, Issue 17, 1988, Pages 1078-1079

  Yoshimi, M ^a   Hazama, H ^a   Takahashi, M ^a   Kambayashi, S ^a   Tango, H ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Field effect transistors; MOS structures and devices; Semiconductor devices and materials; Semiconductor devices and materials testing

Indexed keywords

SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS - THIN FILMS;

BULK MOSFET; DOPING CONCENTRATION; MOBILITY ENHANCEMENT; SOI (SILICON ON INSULATOR) MOSFET; SOI FILM; VERTICAL ELECTRIC FIELD;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0024054507     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19880731     Document Type: Article

References (9)

1. mahli, s. d. s., lam, h. w., and pinizzotto, r. f.: ‘Novel SOI CMOS design using ultra thin near intrinsic substrate’. Tech. Dig. of lEDM 1982, p. 107
2. throngnumchai, k., asada, k., and sugano, t.: ‘Modeling of 0.1 μm MOSFET on SOI structure using Monte Carlo simulation technique’, IEEE Trans., 1986, ED-33, p. 1005
3. sekigawa, t., and hayashi, y.: ‘Calculated threshold-voltage characteristics of an XMOS having an additional bottom gate’, Solid-State Electron., 1984, 27, p. 827
4. colinge, J. p.: ‘Subthreshold slope of thin-film SOI MOSFETs’, IEEE Electron Device Lett., 1986, EDL-7, p. 244
5. colinge, J. p.: ‘Reduction of floating substrate effect in thin-film SOI MOSFETs’, Electron. Lett., 1986, 22, p. 187
6. yoshimi, m., wada, t., kato, k., and tango, h.: ‘High performance SOIMOSFET using ultra-thin SOI film’. Tech. Dig. of IEDM 1987, p. 640
7. hamasaki, t., inoue, t., hlgashinakagawa, i., yoshii, t., kash-iwagi, m., and tango, h.: ‘Amplitude modulated pseudo-line electron beam recrystallization for large area SOI growth’. Extended Abs. of the 17th Conf. on Sol. St. Dev. and Mat., Tokyo, 1985, p. 135
8. nishino, h., and okano, h.: to be published
9. sabnis, a. g., and clemens, j. t.: ‘Characterization of the electron mobility in the inverted (100) Si surface’. Tech. Dig. of lEDM, 1979, p. 18