Two-Dimensional Analysis of the Surface Recombination Effect on Current Gain for GaAlAs/GaAs HBT’s

IEEE Transactions on Electron Devices

Volumn 35, Issue 7, 1988, Pages 857-862

  Hiraoka, Yoshiko Someya ^a   Yoshida, Jiro ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL MODELS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; TRANSISTORS - DEGRADATION;

FERMI LEVEL PINNING; HETEROJUNCTION BIPOLAR TRANSISTORS (HBT); SURFACE RECOMBINATION EFFECT; TWO-DIMENSIONAL NUMERICAL MODEL;

TRANSISTORS, BIPOLAR;

EID: 0024053859     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.3336     Document Type: Article

References (12)

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