Experimental Determination of Time Constants for Ion-Induced Transients in Static Memories

IEEE Transactions on Electron Devices

Volumn 35, Issue 7, 1988, Pages 1116-1119

  Weaver, Harry T ^a   Browning, John S ^a   Shafer, Blynn D ^a   Fu, J S ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE, DIGITAL - RANDOM ACCESS; SEMICONDUCTOR DEVICES, FIELD EFFECT;

HIGH-ENERGY ION STRIKES; ION-INDUCED TRANSIENTS; STATIC/RANDOM ACCESS MEMORIES (SRAM); TRANSIENT TIME CONSTANTS DETERMINATION;

DATA STORAGE UNITS;

EID: 0024048843     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.3371     Document Type: Article

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