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Solid State Electronics

Volumn 31, Issue 6, 1988, Pages 1031-1047

High-field, nonlinear electron transport in lightly doped Schottky-barrier diodes

(1) Darling, Robert B a

a UNIVERSITY OF WASHINGTON (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS - TRANSPORT PROPERTIES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES, SCHOTTKY BARRIER;

HIGH-FIELD TRANSPORT; MOMENTUM BALANCE; NONLINEAR ELECTRON TRANSPORT; SCHOTTKY-BARRIER DIODES; THERMIONIC EMISSION;

SEMICONDUCTOR DIODES;

EID: 0024030448 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/0038-1101(88)90402-9 Document Type: Article

Times cited : (21)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.