Dependence of energy gap on x in cualxga1-xs2mixed crystal system

Japanese Journal of Applied Physics

Volumn 27, Issue 6R, 1988, Pages 972-978

  Tsuboi, Nozomu ^a   Kobayashi, Satoshi ^a   Kaneko, Futao ^a   Maruyama, Takeo ^a  

^a NIIGATA UNIVERSITY   (Japan)

Author keywords

Compound semiconductor; Copper aluminum gallium disulfide; Exciton; I III Vl2 chalcopyrite; Mixed crystal; Multinary compound; Semiconductor; Ternary compound

Indexed keywords

BAND STRUCTURE; CRYSTALS--SPECTRUM ANALYSIS;

CHALCOPYRITE; COMPOUND SEMICONDUCTOR; COPPER ALUMINUM GALLIUM DISULFIDE; MIXED CRYSTAL; MULTINARY COMPOUND; TERNARY COMPOUND;

SEMICONDUCTOR MATERIALS;

EID: 0024020326     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.27.972     Document Type: Article

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