Epitaxial growth of ba2ycu3oxthin film on epitaxial zro2si(100)

Japanese Journal of Applied Physics

Volumn 27, Issue 6A, 1988, Pages L1068-L1070

  Myoren, Hiroaki ^a   Nishiyama, Yukio ^a   Nasu, Hiroyuki ^a   Imura, Takeshi ^a   Osaka, Yukio ^a   Yamanaka, Shoji ^a   Hattori, Makoto ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

Ba2YCu30x; Buffer layer; Deposition on Si; Epitaxial film; Epitaxial growth; Epitaxially grown Zr02 on Si(100); High rc thin films; Rf sputtering

Indexed keywords

BARIUM COMPOUNDS--THIN FILMS; CRYSTALS--EPITAXIAL GROWTH; SEMICONDUCTING SILICON--SUBSTRATES; SPUTTERING; ZIRCONIUM COMPOUNDS--THIN FILMS;

HIGH TEMPERATURE SUPERCONDUCTORS; OXIDE SUPERCONDUCTORS; RF SPUTTERING; ZIRCONIUM OXIDE BUFFER LAYER;

SUPERCONDUCTING MATERIALS;

EID: 0024018538     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.27.L1068     Document Type: Article

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