Study on the si(111) √3×√3-ag surface structure by x-ray diffraction

Japanese Journal of Applied Physics

Volumn 27, Issue 5A, 1988, Pages L753-L755

  Takahashi, Toshio ^a   Nakatani, Shinichiro ^a   Okamoto, Naoko ^a   Ishikawa, Tetsuya ^a,b   Kikuta, Seishi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b HIGH ENERGY ACCELERATOR RESEARCH ORGANIZATION KEK   (Japan)

Author keywords

Silicon; Silver. X ray diffraction; Structure analysis; Surface structure; Synchrotron radiation; Van der Waals radius

Indexed keywords

MICROSCOPES, ELECTRON - APPLICATIONS; SILVER AND ALLOYS - THIN FILMS; SURFACES - STRUCTURES; X-RAYS - DIFFRACTION;

HONEYCOMB STRUCTURE; SCANNING TUNNELING MICROSCOPY;

SILICON AND ALLOYS;

EID: 0024014144     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.27.L753     Document Type: Article

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