A New and Simple Model for GaAs Heterojunction FET Gate Characteristics

IEEE Transactions on Electron Devices

Volumn 35, Issue 5, 1988, Pages 570-577

  Chen, Chung Hsu ^a   Baier, Steven M ^a   Arch, David K ^a   Shur, Michael S ^b  

^a HONEYWELL TECHNOLOGY CENTER   (United States)

^b UNIVERSITY OF MINNESOTA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE - DOPING; SEMICONDUCTOR DEVICES, SCHOTTKY BARRIER - HETEROJUNCTIONS; SEMICONDUCTOR DIODES;

EFFECTIVE ELECTRON TEMPERATURE; GATE CURRENT-VOLTAGE CHARACTERISTICS; HETEROSTRUCTURE INSULATED-GATE FET; METAL-SEMICONDUCTOR FET (MESFET); MODULATION-DOPED FIELD-EFFECT TRANSISTORS (MODFETS);

TRANSISTORS, FIELD EFFECT;

EID: 0024013810     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.2499     Document Type: Article

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