GaAs Mesfets with Nonalloyed Ohmic Contacts: Technology and Performance

Electronics Letters

Volumn 24, Issue 11, 1988, Pages 708-709

  Paccagnella, A ^a   Canali, C ^b   Donzelli, G ^c   Wang, L C ^d   Lau, S S ^d  

^a Dipartimento di Ingegneria@r@nUniversitá di Trento ^*  (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

^c Accent SPA   (Italy)

^d UNIVERSITY OF BARI   (Italy)

Author keywords

Field effect transistors; Semiconductor devices and materials; Vapour deposition

Indexed keywords

ELECTRIC CONTACTS, OHMIC--VAPOR DEPOSITION; ELECTRIC CONTACTS, OHMIC; SEMICONDUCTING GALLIUM ARSENIDE;

GALLIUM ARSENIDE MESFETS; GERMANIUM/PALLADIUM/GALLIUM ARSENIDE STRUCTURE; NONALLOYED OHMIC CONTACTS;

TRANSISTORS, FIELD EFFECT;

CONTACT RESISTIVITY; MESFETS; NONALLOYED OHMIC CONTACTS;

EID: 0024010105     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19880478     Document Type: Article

References (3)

1. PALMSTROM, c. J., and MORGAN, D. v.: ‘Metallizations for GaAs devices and circuits’, in HOWES, M. J., and MORGAN, D. V. (Eds.): ‘Gallium arsenide’ (J. Wiley, New York, 1985)
2. MARSHALL, E. D., ZHANG, B., WANG, L. C., JIAO, P. F., CHEN, W. X., SAWADA, T., LAU, S. S., KAVANAGH, K. L., and KEUCH, T. F.: ‘Non- alloyed ohmic contacts to n-GaAs by solid phase epitaxy of Ge’, J. Appl. Phys., 1987, 62, pp. 942-947
3. FUKUI, H.: ‘Determination of the basic devices parameters of a GaAs MESFET’, Bell Syst. Tech. J., 1979, 58, pp. 711-797 BERGER, H. M.: ‘Models for contacts to planar devices’, Solid State Electron., 1972, 15, pp. 145-158