The Temperature Dependence of the Etch Rates of GaAs, AIGaAs, InP, and Masking Materials in a Boron Trichloride: Chlorine Plasma

Journal of the Electrochemical Society

Volumn 135, Issue 4, 1988, Pages 929-936

  Contolini, Robert J ^a  

^a LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PLASMAS - APPLICATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS - ETCHING; SEMICONDUCTING INDIUM COMPOUNDS - ETCHING;

BORON TRICHLORIDE; ETCH RATES; MASKING MATERIALS; SPUTTER-ASSISTED ETCHING; SURFACE OXIDES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0023999740     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2095839     Document Type: Article

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