Simulation of GaAs p-i-n Diodes

IEEE Transactions on Electron Devices

Volumn 35, Issue 4, 1988, Pages 414-417

  Gopinath, A ^a   Atwater, H ^b  

^a UNIVERSITY OF MINNESOTA   (United States)

^b MIT LINCOLN LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE - DOPING;

CARRIER LIFETIME; I-LAYER MODULATION; P-I-N DIODES;

SEMICONDUCTOR DIODES;

EID: 0023996633     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.2473     Document Type: Article

References (13)

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