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Volumn 36, Issue 3, 1988, Pages 552-560

FET#x2019;s and HEMT#x2019;s at Cryogenic Temperatures#x2014;Their Properties and Use in Low-Noise Amplifiers

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS, MICROWAVE - COMPONENTS;

EID: 0023983509     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.3548     Document Type: Article
Times cited : (75)

References (35)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.