An Analytical Expression for Fermi Level Versus Sheet Carrier Concentration for HEMT Modeling

IEEE Electron Device Letters

Volumn 9, Issue 3, 1988, Pages 136-138

  Kola, S ^a   Golio, J Michael ^a   Maracas, George N ^b  

^a ARIZONA STATE UNIVERSITY   (United States)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES - ELECTRONIC PROPERTIES;

2-D ELECTRON GAS DENSITY; FERMI LEVEL VARIATIONS; HIGH ELECTRON MOBILITY TRANSISTORS (HEMT);

TRANSISTORS;

EID: 0023983508     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.2067     Document Type: Article

References (6)

1. T. J. Drummond, H. Morko[formula omiited], K. Lee, and M. Shur, “Model for modulation doped field effect transistor”, IEEE Electron Device Lett., vol. EDL-3, pp. 338-341, 1982.
2. D. Delagebeaudeuf and N. T. Linh, “Metal-(n)AlGaAs-GaAs two dimensional electron gas FET”, IEEE Trans. Electron Devices, vol. ED-29, pp. 955-960, 1982.
3. K. Lee, M. S. Shur, T. J. Drummond, and H. Morkof, “Electron density of the two dimensional electron gas in modulation doped layers”, J. Appl. Phys., vol. 54, pp. 2093-2096, 1983.
4. G. E. Forsythe, M. A. Malcom, and C. B. Moler, “Least squares and the singular value decomposition”, in Computer Methods for Mathematical Computations. Englewood Cliffs, NJ: Prentice-Hall, 1977, ch. 9, pp. 192-239.
5. S. Kola, G. N. Maracas, and J. M. Golio, submitted to IEEE Trans. Electron Devices.
6. B. Vinter, “Subbards and charge control in a two-dimensional electron gas field-effect transistors”, Appl. Phys. Lett., vol. 44, no. 3, pp. 307-309, 1984.