Subthreshold Current in GaAs MESFET's

IEEE Electron Device Letters

Volumn 9, Issue 3, 1988, Pages 128-129

  Conger, J ^a   Peczalski, Andrzej ^a   Shur, Michael S ^b  

^a HONEYWELL TECHNOLOGY CENTER   (United States)

^b UNIVERSITY OF MINNESOTA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICES, FIELD EFFECT - MATHEMATICAL MODELS;

GALLIUM ARSENIDE MESFET; METAL-SEMICONDUCTOR FET (MESFET); SUBTHRESHOLD CURRENT;

TRANSISTORS, FIELD EFFECT;

EID: 0023983401     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.2064     Document Type: Article

References (5)

1. C. T. M. Chang, T. Vrotsos, M. T. Frizzell, and R. Carrol, “A subthreshold current model for GaAs MESFETs”, IEEE Electron Device Lett., vol. EDL-8, pp. 69-72, Feb. 1987.
2. T. Takada, M. Togashi, and T. Hirota, “GaAs MESFET simulation model”, Digital Tech. Group, IECE (Japan), ED-83-113, pp. 9-15, 1984.
3. C. Dunn, Microwave Semiconductor Devices and Their Circuit Applications, H. A. Watson, Ed. New York: McGraw-Hill, 1969, ch. 13.
4. C. H. Hyun, Ph.D. dissertation, Electrical Eng. Dept., Univ. Minnesota, Minneapolis, 1985.
5. C. H. Hyun, M. S. Shur, and A. Peczalski, “Analysis of noise margin and speed of GaAs MESFET DCFL using UM-SPICE”, IEEE Trans. Electron Devices, vol. ED-33, pp. 1421-1425, Oct. 1986.