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1
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0022046259
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A 9 GHz frequency divider using Si bipola super self-aligned process technology
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Apr.
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M. Suzuki et. al., #x201C;A 9 GHz frequency divider using Si bipola super self-aligned process technology,#x201D; IEEE Electron Device Lett. vol. EDL-6, pp. 181-183, Apr. 1985.
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(1985)
IEEE Electron Device Lett
, vol.EDL-6
, pp. 181-183
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Suzuki, M.1
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2
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84941428496
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Super self-aligned process technology (SST) for Si bipolar devices
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Aachen, W Germany, Sept.
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S. Konaka et al., #x2018;#x2018;Super self-aligned process technology (SST) for Si bipolar devices,#x201D; presented at ESSDERC #x2019;85, Aachen, W Germany, Sept. 1985.
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(1985)
presented at ESSDERC #x2019;85
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Konaka, S.1
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3
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0023292107
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Static #x2018; GHz frequency divider IC based on a 2 #x00B5;m Si bipolar technology,#x2019;
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Feb.
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P. Weger, L. Treitinger, R. Reimann, and H.-M. Rein, #x201C;Static #x2018; GHz frequency divider IC based on a 2 #x00B5;m Si bipolar technology,#x2019; Electron. Lett., vol. 23, pp. 192-193, Feb. 1987.
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(1987)
Electron. Lett.
, vol.23
, pp. 192-193
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Weger, P.1
Treitinger, L.2
Reimann, R.3
Rein, H.-M.4
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4
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84941446893
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A monolithic 5 GH: frequency divider IC fabricated with a standard bipolar technology,#x2019; in ESSCIRC #x2019;85 Dig. Tech. Papers (Toulouse, France), Sept 1985, 396-400.
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R. H. Derksen, H.-M. Rein, and K. Worner, #x201C;A monolithic 5 GH: frequency divider IC fabricated with a standard bipolar technology,#x2019; in ESSCIRC #x2019;85 Dig. Tech. Papers (Toulouse, France), Sept 1985, 396-400.
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(1985)
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Derksen, R.H.1
Rein, H.-M.2
Worner, K.3
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5
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0022145561
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Monolithic integration of a 5.3 GHz regenerative frequency divider using a standard bipolar technology
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R. H. Derksen, H.-M. Rein, and K. Worner, #x201C;Monolithic integration of a 5.3 GHz regenerative frequency divider using a standard bipolar technology,#x201D; Electron. Lett., vol. 21, pp. 1037-1039, Oct 1985.
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(1985)
Electron. Lett.
, vol.21
, pp. 1037-1039
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Derksen, R.H.1
Rein, H.-M.2
Worner, K.3
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6
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0001612587
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Fractional-frequency generators utilizing regcncrative modulation
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July
-
R. L. Miller, #x201C;Fractional-frequency generators utilizing regcncrative modulation,#x201D; Proc. Inst. Rad. Eng., vol. 27, pp. 446-457, July 1939.
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(1939)
Proc. Inst. Rad. Eng.
, vol.27
, pp. 446-457
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Miller, R.L.1
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7
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0018063165
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Frequency-dividers for ultra-high frequen cies
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W. D. Kasperkovitz, #x201C;Frequency-dividers for ultra-high frequencies,#x201D; Philips Tech. Rev., vol. 38, pp. 54-68, 1978/79.
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(1978)
Philips Tech. Rev.
, vol.38
, pp. 54-68
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Kasperkovitz, W.D.1
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8
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84941468064
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Dynamischer Frequenzteiler mit Mischstufe unt Verstarker
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H.-M. Rein, #x201C;Dynamischer Frequenzteiler mit Mischstufe und Verstarker,#x201D; W. German patent P 3509 327, 1987.
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(1987)
W. German patent P 3509 327
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Rein, H.-M.1
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9
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0023401075
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Bipolar high-gain limiting amplifier IC for optical fiber receivers operating up to 4 Gbit/s
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Aug.
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R. Reimann and H.-M. Rein, #x201C;Bipolar high-gain limiting amplifier IC for optical fiber receivers operating up to 4 Gbit/s,#x201D; IEEE J Solid-State Circuits, vol. SC-22, pp. 504-511, Aug. 1987.
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(1987)
IEEE J Solid-State Circuits
, vol.SC-22
, pp. 504-511
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Reimann, R.1
Rein, H.-M.2
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10
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2342581947
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A 4:1 time-division multiplexer IC for bit rates up to 6 Gbit/s based on a standard bipolar technol ogy
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R. Reimann and H.-M. Rein, #x201C;A 4:1 time-division multiplexer IC for bit rates up to 6 Gbit/s based on a standard bipolar technology,#x201D; IEEE J. Solid-Stale Circuits, vol. SC-21, pp. 785-789, Oct 1986.
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(1986)
IEEE J. Solid-Stale Circuits
, vol.SC-21
, pp. 785-789
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Reimann, R.1
Rein, H.-M.2
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11
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0017453811
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A simple but efficient analog computer for simulation of high-speed integrated circuits
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Feb.
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R. Ranfft and H.-M. Rein, #x201C;A simple but efficient analog computer for simulation of high-speed integrated circuits,#x201D; IEEE J. Solid State Circuits, vol. SC-12, pp. 51-58, Feb. 1977.
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(1977)
IEEE J. Solid State Circuits
, vol.SC-12
, pp. 51-58
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Ranfft, R.1
Rein, H.-M.2
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12
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0017439948
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Improving the large-signal models of bipolar transistors by dividing the intrinsic base into two lateral sections,#x2019;
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Jan.
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H.-M. Rein, #x201C;Improving the large-signal models of bipolar transistors by dividing the intrinsic base into two lateral sections,#x2019; Electron. Lett., vol. 13, pp. 40-41, Jan. 1977.
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(1977)
Electron. Lett.
, vol.13
, pp. 40-41
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Rein, H.-M.1
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13
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84941465483
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Monolithisch integrierte regenerative Frequenzteiler in Silizium-Bipolartechnologie fur den GHz-Bereich und ihr Vergleich mit anderen Teilerprinzipien
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R. H. Derksen, #x201C;Monolithisch integrierte regenerative Frequenzteiler in Silizium-Bipolartechnologie fur den GHz-Bereich und ihr Vergleich mit anderen Teilerprinzipien,#x201D; Dr.-Ing. thesis at Ruhr-University Bochum, 1987.
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(1987)
Dr.-Ing. thesis at Ruhr-University Bochum
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Derksen, R.H.1
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14
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84907822094
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Speed power relation of modern bipolar technology.
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Sept.
-
P. Weger and H.-M. Rein, #x201C;Speed power relation of modern bipolar technology.” presented at ESSDERC #x2019;87, Bologna, Italy, Sept. 1987.
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(1987)
presented at ESSDERC #x2019;87
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Weger, P.1
Rein, H.-M.2
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15
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0021519538
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Regenerative frequency division with a GaAsFET
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Nov.
-
C. Rauscher, #x201C;Regenerative frequency division with a GaAsFET,#x201D; IEEE Trans. Microwave Theory Tech., vol. MTT-32, pp. 1461-1468, Nov. 1984.
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(1984)
IEEE Trans. Microwave Theory Tech.
, vol.MTT-32
, pp. 1461-1468
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Rauscher, C.1
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16
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0022144479
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14 GHz band GaAs monolithic analogue frequency divider
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Oct.
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T. Ohira, K. Araki, T. Tanaka, and H. Kato, #x201C;14 GHz band GaAs monolithic analogue frequency divider,#x201D; Electron. Lett., vol. 21, pp. 1057-1058, Oct. 1985.
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(1985)
Electron. Lett.
, vol.21
, pp. 1057-1058
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Ohira, T.1
Araki, K.2
Tanaka, T.3
Kato, H.4
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