Ion‐beam induced silver doping in the Ag2Se/GeSe2‐resist system

physica status solidi (a)

Volumn 106, Issue 1, 1988, Pages 57-65

  Klabes, R ^a,d   Beyer, W ^a,d   Thomas, A ^b   Kluge, G ^b   Suptitz P ^b   Grotzschel R ^c  

^a ZMD   (Germany)

^b Akademie Der Wissenschaften Der Ddr ^*

^c Saxonian Academy of Sciences   (Germany)

^d DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GERMANIUM COMPOUNDS - RADIATION EFFECTS;

ION-BEAM INDUCED SILVER DOPING; MICROLITHOGRAPHY; RESIST SYSTEMS; RUTHERFORD BACKSCATTERING;

FILMS;

EID: 0023978999     PISSN: 00318965     EISSN: 1521396X     Source Type: Journal    
DOI: 10.1002/pssa.2211060108     Document Type: Article

References (10)

1. Germanium selenide: A resist for low-energy ion beam lithography
2. Silver diffusion in Ag2Se/GeSe2 inorganic resist system
3. A Monte Carlo computer program for the transport of energetic ions in amorphous targets
4. High energy ion beam induced Ag diffusion within amorphous Ag:GeSe2