Investigations of the bulk defect chemistry of polycrystalline Tin(IV) oxide

Journal of Solid State Chemistry

Volumn 72, Issue 2, 1988, Pages 293-302

  Maier, J ^a   Gopel W ^b  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b UNIVERSITY OF TÜBINGEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR MATERIALS - ELECTRIC CONDUCTIVITY;

BULK DEFECT CHEMISTRY; CONDUCTION ELECTRONS; DEFECT MODEL; LATTICE CONSTANTS; TIN OXIDE;

SEMICONDUCTING TIN COMPOUNDS;

EID: 0023964994     PISSN: 00224596     EISSN: 1095726X     Source Type: Journal    
DOI: 10.1016/0022-4596(88)90032-1     Document Type: Article

References (22)

1. Chemisorption and charge transfer at ionic semiconductor surfaces: Implications in designing gas sensors
2. Electrical Properties of High-Quality Stannic Oxide Crystals
3. Gmelin's Handbuch der anorganischen Chemie
4. Elektrische Untersuchungen an „zusatzfreien” Zinndioxydschichten hoher Elektronenkonzentration im Temperaturbereich zwischen 90 °K bis etwa 290 deg;K
5. Electrical Properties of Stannic Oxide Single Crystals
6. Evaluation of Electrochemical Methods in Solid State Research and Their Generalization for Defects with Variable Charges