Formation of Source and Drain Regions for a-Si:H Thin-Film Transistors by Low-Energy Ion Doping Technique

IEEE Electron Device Letters

Volumn 9, Issue 2, 1988, Pages 90-93

  Yoshida, A ^a   Setsune, K ^a   Hirao, T ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING FILMS - AMORPHOUS; SEMICONDUCTING SILICON - DOPING; SEMICONDUCTOR MATERIALS - ION IMPLANTATION;

HYDROGENATED AMORPHOUS SILICON THIN-FILM TRANSISTOR; PHOSPHORUS AND HYDROGEN IONS IMPLANTATION; SOURCE AND DRAIN REGIONS FORMATION;

TRANSISTORS;

EID: 0023962683     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.2050     Document Type: Article

References (9)

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