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Volumn 24, Issue 2, 1988, Pages 304-310

Theory of Transient Energy Transfer in Gallium Arsenide

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTROOPTICAL EFFECTS; OPTICAL PUMPING; OPTICS - NONLINEAR; SEMICONDUCTOR MATERIALS - PLASMAS;

EID: 0023962094     PISSN: 00189197     EISSN: 15581713     Source Type: Journal    
DOI: 10.1109/3.126     Document Type: Article
Times cited : (79)

References (25)
  • 2
    • 0000799085 scopus 로고
    • Holography, coherent light amplification and optical phase conjugation with photorefractive materials
    • G. C. Valley, “Simultaneous electron/hole transport in photorefractive tive materials,” J. App!. Phys., vol. 59, pp. 3363–3366, 1986; F. P. Strohkendl, J. M. C. Jonathan, and R. W. Hellwarth, “Hole-electron competition in photorefractive gratings,” Opt. Lett., vol. 11, pp. 312–314, 314, 1986.
    • (1982) Phys. Rep , vol.93 , pp. 199-299
    • Gunter, P.1
  • 3
    • 36549104239 scopus 로고
    • Simultaneous electron/hole transport in photorefractive tive materials
    • F. P. Strohkendl, J. M. C. Jonathan, and R. W. Hellwarth, “Hole-electron competition in photorefractive gratings Opt. Lett.
    • A. M. Glass, A. M. Johnson, D. H. Olson, W. Simpson, and A. A. Ballman, “Four-wave mixing in semi-insulating InP and GaAs using the photorefractive effect,” App!. Phys. Lett., vol. 44, pp. 948–950, 1984.
    • (1986) J. Appl Phys , vol.59 , pp. 3363-3366
    • Valley, G.C.1
  • 5
    • 0021477651 scopus 로고
    • Beam coupling in undoped GaAs at 1.06 Am using the photorefractive effect
    • M. B. Klein, ℌBeam coupling in undoped GaAs at 1.06 pm using the photorefractive effect,” Opt. Lett., vol. 9, pp. 350-352, 1984.
    • (1984) Opt. Lett , vol.9 , pp. 350-352
    • Klein, M.B.1
  • 6
    • 0007293067 scopus 로고
    • Transformation of intensities and phases of light beams by a transient undis-placed placed holographic grating
    • (Soy. J. Quantum Electron., vol.7, pp. 230 233, 1977); V. L. Vinetskii, N. V. Kukhtarev, E. N. Salkova, and L. G. Suk-hoverkhova, hoverkhova, “Mechanisms of dynamic conversion of coherent optical beams in CdS,” Kvantovaya Elektron., vol. 7, pp. 1191-1198, 1980 (Sov. J. Quantum Electron., vol. 10, pp. 684-688, 1980).
    • V. L. Vinetskii, N. V. Kukhtarev, and M. S. Soskin, “Transformation of intensities and phases of light beams by a transient `undis-placed’ placed’ holographic grating,” Kvantovaya Elektron., vol. 4, pp. 420–425, 425, 1977 (Soy. J. Quantum Electron., vol. 7, pp. 230–233, 1977); V. L. Vinetskii, N. V. Kukhtarev, E. N. Sal’kova, and L. G. Suk-hoverkhova, hoverkhova, “Mechanisms of dynamic conversion of coherent optical beams in CdS,” Kvantovaya Elektron., vol. 7, pp. 1191–1198, 1980 (Sov. J. Quantum Electron., vol. 10, pp.684-688, 1980).
    • (1977) Kvantovaya Elektron , vol.4 , pp. 420-425
    • Vinetskii, V.L.1    Kukhtarev, N.V.2    Soskin, M.S.3
  • 7
    • 0003245394 scopus 로고
    • Degenerate four-wave mixing in semi-conductors
    • R. A. Fisher Ed. New York Academic
    • R. K. Jain and M. B. Klein, “Degenerate four-wave mixing in semiconductors.” in Optical Phase Conjugdon, R. A. Fisher, Ed. NewYork: Academic, 1983, pp. 307-415, ch. 10.
    • (1983) Optical Phase Conjugation , Issue.10 , pp. 307-415
    • Jain, R.K.1    Klein, M.B.2
  • 8
    • 0023962059 scopus 로고    scopus 로고
    • Pi-cosecond cosecond photorefractive and free-carrier transient energy transfer in GaAs at 1Μm
    • A. L. Smirl, G. C. Valley, K. Bohnert, and T. F. Boggess, Jr., “Pi-cosecond cosecond photorefractive and free-carrier transient energy transfer in GaAs at 1 μm,” IEEE J. Quantum Electron., this issue, pp. 289–303, 303
    • IEEE J. Quantum Electron , vol.303 , pp. 289-303
    • Smirl, A.L.1    Valley, G.C.2    Bohnert, K.3    Boggess, T.F.4
  • 9
    • 0003121364 scopus 로고
    • Optical assessment of the main electron trap in bulk semi-insulating GaAs
    • G. M. Martin, ℌOptical assessment of the main electron trap in bulk semi-insulating GaAs,ℍ Appl. Phgs. Lett., vol. 39, pp. 747-749, 1981.
    • (1981) Appl. Phgs. Lett , vol.39 , pp. 747-749
    • Martin, G.M.1
  • 10
    • 0018455551 scopus 로고
    • Auger de-excitation of a metastable state in GaAs
    • A. Mitonneau and A. Mircea, ℌAuger de-excitation of a metastable state in GaAs,ℍ Solid Stute Commun., vol. 30, pp. 157-162, 1979.
    • (1979) Solid Stute Commun , vol.30 , pp. 157-162
    • Mitonneau, A.1    Mircea, A.2
  • 12
    • 0001510088 scopus 로고
    • Experimental requirements for quantitative mapping of midgap flaw concentration in semi-insulating GaAs wafers by measurement of near-infrared transmittance
    • P. Dobrilla and J. S. Blakemore, “Experimental requirements for quantitative mapping of midgap flaw concentration in semi-insulating GaAs wafers by measurement of near-infrared transmi tance,” J.Appl. Phys., vol. 58, pp. 208-218, 1985.
    • (1985) J. Appl. Phys , vol.58 , pp. 208-218
    • Dobrilla, P.1    Blakemore, J.S.2
  • 13
    • 0020126795 scopus 로고
    • Photoelectric memory effect in GaAs
    • G. Vincent, D. Bois, and A. Chantre. “Photoelectric memory effect in GaAs.” J. Appl. Phys., vol. 53, pp. 3643-3649, 1982.
    • (1982) J. Appl. Phys , vol.53 , pp. 3643-3649
    • Vincent, G.1    Bois, D.2    Chantre, A.3
  • 14
    • 0000845971 scopus 로고
    • Deep-level optical spectroscopy in GaAs
    • A. Chantre, G. Vincent, and D. Bois. “Deep-level optical spectroscopy in GaAs,” Phys. Rev. E., vol. 23, pp. 5335-5359, 1981.
    • (1981) Phgs. Rev. E , vol.23 , pp. 5335-5359
    • Chantre, A.1    Vincent, G.2    Bois, D.3
  • 15
    • 84913293103 scopus 로고
    • Key electrical parameters in semi-insulating materials;the methods to determine them in GaAs
    • G. J. Rees, Ed. Nantwich. U.K.: Shiva
    • G. Martin, “Key electrical parameters in semi-insulating materials; the methods to determine them in GaAs,” in Semi-insuleting III-IV Materials, G. J. Rees, Ed. Nantwich. U.K.: Shiva. 1980, pp. 13-28.
    • (1980) Semi Insulating III-IV Materials , pp. 13-28
    • Martin, G.1
  • 16
    • 0020193772 scopus 로고
    • Semiconducting and other major properties of gallium arsenide
    • J. S. Blakemore, “Semiconducting and other major properties of gallium arsenide,” J. Appl. Phys. vol. 53, pp. R123-RI81. 1982.
    • (1982) J. Appl. Phys. , vol.53 , pp. R123-RI81
    • Blakemore, J.S.1
  • 19
    • 51649181242 scopus 로고
    • A study of deep levels in GaAa by capacitance spectroscopy
    • D. V. Lang and R. A. Logan,“A study of deep levels in GaAa by capacitance spectroscopy,” J. Electron. Mut., vol. 4, pp. 1053- 1065.1975.
    • (1975) J. Electron. Mut , vol.4 , pp. 1053-1065
    • Lang, D.V.1    Logan, R.A.2
  • 20
    • 0021428098 scopus 로고
    • Free carrier lifetime in semi-insulating GaAs from time-resolved band-to-band photoluminescence
    • J. S. Weiner and P. Y. Yu, “Free carrier lifetime in semi-insulating GaAs from time-resolved band-to-band photoluminescence.” J. Appl. Phys., vol. 55, pp. 3889-3891, 1984.
    • (1984) J. Appl Phys , vol.55 , pp. 3889-3891
    • Weiner, J.S.1    Yu, P.Y.2
  • 21
    • 0942281141 scopus 로고
    • Investigation of the nonlinearity in the luminescence of GaAs under high-density picosecond photoexcitation
    • A. Von Lehmen, and J. M. Ballantyne, “Investigation of the nonlinearity in the luminescence of GaAs under high-density picosecond photoexcitation,”J. Appl. PI1y.s. vol. 58, pp, 958-962, 1985.
    • (1985) J. Appl. PI1y.s. , vol.58 , pp. 958-962
    • Von Lehmen, A.1    Ballantyne, J.M.2
  • 22
    • 0020223801 scopus 로고
    • Characterization of semi-insulating GaAs
    • S. Makram-Ebeid and B. Tuck Eds. Nantwich U.K.: Shiva
    • W. Walukiewicz, L. Pawlowicz, J. Lagowski, and H. C. Gatos. “Characterization of semi-insulating GaAs,” in Semi-insulating /It-V Materials, S. Makram-Ebeid and B. Tuck, Eds. Nantwich, U.K.: Shiva, 1982, pp. 121-127.
    • (1982) Semi-insulating/It-V Materials , pp. 121-127
    • Walukiewicz, W.1    Pawlowicz, L.2    Lagowski, J.3    Gatos, H.C.4
  • 24
    • 6144254311 scopus 로고
    • Search for resonance behavior in the microwave dielectric constant of GaAs
    • K. S. Champlin, R. J. Erlandson, G. H. Glover, P. S. Hauge, and T. Lu, “Search for resonance behavior in the microwave dielectric constant of GaAs,” Appl. Phys. Lett., vol. 1 1, pp. 348-349, 1967.
    • (1967) Appl. Phys. Lett , vol.11 , pp. 348-349
    • Champlin, K.S.1    Erlandson, R.J.2    Glover, G.H.3    Hauge, P.S.4    Lu, T.5
  • 25
    • 0016928320 scopus 로고
    • Measurements of the linear electrooptic coefficients and analysis of the nonlinear susceptibilities in cubic GaAs and hexagonal CdS
    • M. Sugie and K. Tada, “Measurements of the linear electrooptic coefficients and analysis of the nonlinear susceptibilities in cubic GaAs and hexagonal CdS.” Jupan. J. Appl. Phys. vol. 15, pp. 421-431, 1976
    • (1976) Jupan. J. Appl. Phys. , vol.15 , pp. 421-431
    • Sugie, M.1    Tada, K.2


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