Ultrafast Luminescence Spectroscopy Using Sum Frequency Generation

IEEE Journal of Quantum Electronics

Volumn 24, Issue 2, 1988, Pages 276-288

  Shah, Jagdeep ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS - OPTICAL PROPERTIES; LUMINESCENCE; OPTICS - NONLINEAR; SEMICONDUCTOR MATERIALS - PHOTOCONDUCTIVITY;

PHOTOEXCITED CARRIERS; SUM FREQUENCY GENERATION; TIME-RESOLVED LUMINESCENCE SPECTRA; ULTRAFAST LUMINESCENCE SPECTROSCOPY; UPCONVERGENCE SPECTROMETER;

SPECTROSCOPY, EMISSION;

EID: 0023961549     PISSN: 00189197     EISSN: 15581713     Source Type: Journal    
DOI: 10.1109/3.124     Document Type: Article

References (22)

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18. d is sometimes defined without so; in this case d(m/V) = (1/E0)d(As/V2) = 1.13 x 10” d(As/V 2).
19. For a semiconductor with index of refraction nsc, only the light emitted within a cone of half angle αc⩵sin-1 (1/nsc) comes out of the front face toward collecting optics. Therefore ER(hvIR, t) d(hvIR) dt RTot(hvIR, t) d(hvIR) dt] = (1/4π). [π(tan αc)2/27π] where R is as defined in the text, and RTot(hvIR, t) d(hvIR) dt is the total num-ber of photons emitted inside the sample between hvIR and t + d(hvIR) and between t and t + dt. This ratio is typically about 3.5 x 10-3 (steradian)-1 for semiconductors such as GaAs. The calculated efficiency curves do not take this factor into account.
20. G. R. Fleming and E. W. Castner, private communication; E. W. Castner, Jr., M. Maroncelli, and G. R. Fleming, to be published.
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