Determination of Si-SiO2 Interface Recombination Parameters Using a Gate-Controlled Point-Junction Diode Under Illumination

IEEE Transactions on Electron Devices

Volumn 35, Issue 2, 1988, Pages 203-222

  Girisch, Reinhard B M ^a   Mertens, Robert P ^a,b   De Keersmaecker, Roger F ^a,b  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DIODES - JUNCTIONS;

ELECTRON-HOLE RECOMBINATION PROCESS; GATE-CONTROLLED POINT-JUNCTION DIODE; POLYSILICON OXIDE INTERFACE RECOMBINATION PARAMETERS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0023961305     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.2441     Document Type: Article

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