A Process for the Combined Fabrication of Ion Sensors and CMOS Circuits

IEEE Electron Device Letters

Volumn 9, Issue 1, 1988, Pages 44-46

  Bousse, Luc ^a   Shott, John ^a   Meindl, James D ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS; SILICON NITRIDE; TRANSISTORS, FIELD EFFECT - ION SENSITIVE;

COMPLEMENTARY MOS (CMOS); ION SENSORS; ION-SELECTIVE FIELD-EFFECT TRANSISTORS (ISFET); SOURCE-FOLLOWER CIRCUIT; TUNGSTEN SILICIDE INTERCONNECT LAYER;

SEMICONDUCTOR DEVICES, MOS;

EID: 0023867326     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.20408     Document Type: Article

References (15)

1. P. Bergveld, “Development of an ion-sensitive solidstate device for neurophysiological measurements,” IEEE Trans. Biomed. Eng., vol. BME-17, p. 70, Jan. 1970.
2. S.D. Moss, C.C. Johnson, and J. Janata, “Hydrogen, calcium, and potassium ion-sensitive FET transducers: A preliminary report,” IEEE Trans. Biomed. Eng., vol. BME-25, p. 49, 1978.
3. A. Sibbald, “Chemical-sensitive field-effect transistors,” Proc. Inst. Elec. Eng. I, vol. 130, p. 233, Oct. 1983.
4. W.H. Ko, C.D. Fung, D. Yu, and Y.H. Xu, “Multiple ISFET with integrated circuits,” in Chemical Sensors (Proc. Int. Meeting Chemical Sensors, Fukuoka, Japan, 1983). Amsterdam: Elsevier, 1983, p. 496.
5. A. Sibbald, “A chemical-sensitive integrated circuit: The operational transducer,” Sensors and Actuators, vol. 7, pp. 23–38, 1985.
6. N.F. de Rooij, A. Haemmerli, and A. Grisel, “CMOS compatible pH-ISFET with A1203 gate,” in Implantable Sensors for Closed-Loop Prosthetic Systems, W.H. Ko, Ed. Mount Kisco, NY: Futura, 1985, p. 139.
7. J.R. Pfiester, “Performance limits of CMOS very large scale integration,” Ph.D. dissertation, Stanford Univ., Stanford, CA, June 1984.
8. K.C. Saraswat, D.L. Brors, J.A. Fair, K.A. Monig, and R. Beyers, “Properties of low-pressure CVD tungsten silicide for MOS VLSI interconnections,” IEEE Trans. Electron Devices, vol. ED-30, pp. 1497–1505, 1983.
9. G.B. Bronner and J.D. Plummer, “Characterization of transient process phenomena using a temperature-tolerant metallurgy,” IEEE Electron Device Lett., vol. EDL-5, pp. 75–77, 1984.
10. T. Matsuo and M. Esashi, “Methods of ISFET fabrication,” Sensors and Actuators, vol. 1, pp. 77–96, 1981.
11. T.I. Kamins, S.S. Laderman, D.J. Coulman, and J.E. Turner, “Interaction between CVD tungsten films and silicon during annealing,” J. Eleclrochem. Soc., vol. 133, pp. 1438–1442, July 1986.
12. J. Amano, P. Merchant, T.R. Cass, and J.N. Miller, “Dopant redistribution during titanium silicide formation,” J. App. Phys., vol. 59, pp. 2689–2693, Apr. 1986.
13. D.L. Harame, L.J. Bousse, J. Shott, and J.D. Meindl, “Ion sensing devices with silicon nitride and borosilicate glass insulators,” IEEE Trans. Electron Devices, vol. ED-34, pp. 1700–1707, Aug. 1987.
14. A. Sibbald, P.D. Whalley, and A.K. Covington, “A miniature flow-through cell with a four-function CHEMFET integrated circuit for simultaneous measurements of potassium, hydrogen, calcium and sodium ions,” Anal. Chim. Acta, vol. 159, p. 47, 1984.
15. J.W. Perram, “Structure of the double layer at the oxide/water interface,” J. Chem. Soc. Faraday Trans. II, vol. 69, p. 993, 1973.