Thickness dependence of H2 gas sensor in amorphous SnQx films prepared by ion-beam sputtering

Journal of Materials Science

Volumn 23, Issue 1, 1988, Pages 145-149

  Suzuki, Takeyuki ^a   Yamazaki, Tsutomu ^a   Yoshioka, Hiroshi ^a   Hikichi, Kuniyuki ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGEN; OXIDES - AMORPHOUS; SEMICONDUCTING FILMS - GROWTH; SENSORS - MATERIALS; SPUTTERING;

AMORPHOUS FILM SENSORS; ION-BEAM SPUTTERING; SINTERED ALUMINA SUBSTRATES; TIN OXIDES; ULTRATHIN FILM SENSORS;

SEMICONDUCTING TIN COMPOUNDS;

EID: 0023861836     PISSN: 00222461     EISSN: 15734803     Source Type: Journal    
DOI: 10.1007/BF01174046     Document Type: Article

References (15)

1. Preparation of Fast Detecting SnO2Gas Sensors