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Volumn 36, Issue 1, 1988, Pages 97-103

The Effects of Drift and Diffusion in Semiconductors on Plane Wave Interaction at Interfaces

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROMAGNETIC WAVES - SCATTERING;

EID: 0023855731     PISSN: 0018926X     EISSN: 15582221     Source Type: Journal    
DOI: 10.1109/8.1078     Document Type: Article
Times cited : (23)

References (10)
  • 1
    • 20844454646 scopus 로고
    • Traveling-wave amplification by drifting carriers in semiconductors
    • pp. 668698, June
    • M. Sumi, “Traveling-wave amplification by drifting carriers in semiconductors,” Japanese J. Appl. Phys., vol. 6, no. 6, pp. 668698, June, 1967.
    • (1967) Japanese J. Appl. Phys. , vol.6 , Issue.6
    • Sumi, M.1
  • 8
    • 3242668561 scopus 로고
    • Energy relaxation of electrons in the (100) n-channel of a Si-MOSFET. II. surface phonon treatment
    • C.M. Krowne and J.W. Holm-Kennedy, “Energy relaxation of electrons in the (100) n-channel of a Si-MOSFET. II. surface phonon treatment,” Surface Sci., vol. 46, pp. 232–250. 1974.
    • (1974) Surface Sci. , vol.46 , pp. 232-250
    • Krowne, C.M.1    Holm-Kennedy, J.W.2
  • 9
    • 0020749397 scopus 로고
    • Electron Power Loss in the (100) n-Channel of a Si metal oxide-semiconductor field-effect transistor. I. Intrasubband phonon scattering
    • May
    • C.M. Krowne, “Electron Power Loss in the (100) n-Channel of a Si metal oxide-semiconductor field-effect transistor. I. Intrasubband phonon scattering,” J. Appl. Phys., vol. 54, pp. 2455–2467, May 1983.
    • (1983) J. Appl. Phys. , vol.54 , pp. 2455-2467
    • Krowne, C.M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.