RESISTANCE CHANGE METHODOLOGY FOR THE STUDY OF ELECTROMIGRATION IN Al-Si INTERCONNECTS.

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1988, Pages 209-215

  Maiz, J A ^a   Segura, I ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC MEASUREMENTS - RESISTANCE; FILMS - METALLIC;

ALUMINUM-SILICON INTERCONNECTS; DC RESISTOMETRY; ELECTROMIGRATION TEST TIME REDUCTION;

INTEGRATED CIRCUITS, VLSI;

EID: 0023855692     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)