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Volumn 9, Issue 1, 1988, Pages 23-25

Characteristics of OffsetStructure Polycrystalline-Silicon Thin-Film Transistors

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FAULT CURRENTS - LEAKAGE CURRENTS; ELECTRIC MEASUREMENTS - CURRENT; SEMICONDUCTING SILICON - DOPING; SEMICONDUCTOR MATERIALS - ION IMPLANTATION;

EID: 0023851207     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.20401     Document Type: Article
Times cited : (132)

References (4)
  • 1
    • 0342935290 scopus 로고
    • Characterization of polycrystalline silicon MOS transistors and its film properties. I
    • S. Onga, Y. Mizutani, K. Taniguchi, M. Kashiwagi, K. Shibata, and S. Kohyama, “Characterization of polycrystalline silicon MOS transistors and its film properties. I,” Japan. J. Appl. Phys., vol. 21, no. 10, pp. 1472–1478, 1982.
    • (1982) Japan. J. Appl. Phys. , vol.21 , Issue.10 , pp. 1472-1478
    • Onga, S.1    Mizutani, Y.2    Taniguchi, K.3    Kashiwagi, M.4    Shibata, K.5    Kohyama, S.6
  • 3
    • 0020847405 scopus 로고
    • Effects of grain boundary passivation on the characteristics of p-channel MOSFET's in LPCVD polysilicon
    • S.D.S. Malhi et al., “Effects of grain boundary passivation on the characteristics of p-channel MOSFET's in LPCVD polysilicon,” Electron. Lett., vol. 19, pp. 993–994, 1983.
    • (1983) Electron. Lett. , vol.19 , pp. 993-994
    • Malhi, S.D.S.1
  • 4
    • 0021521891 scopus 로고
    • Hydrogen passivation of polysilicon MOSFET's from a plasma nitride source
    • G.P. Pollack et al., “Hydrogen passivation of polysilicon MOSFET's from a plasma nitride source,” IEEE Electron Device Lett., vol. EDL-5, pp. 468–470, 1984.
    • (1984) IEEE Electron Device Lett. , vol.5 EDL , pp. 468-470
    • Pollack, G.P.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.