|
Volumn 9, Issue 1, 1988, Pages 23-25
|
Characteristics of OffsetStructure Polycrystalline-Silicon Thin-Film Transistors
a a a
a
NTT CORPORATION
(Japan)
|
Author keywords
[No Author keywords available]
|
Indexed keywords
ELECTRIC FAULT CURRENTS - LEAKAGE CURRENTS;
ELECTRIC MEASUREMENTS - CURRENT;
SEMICONDUCTING SILICON - DOPING;
SEMICONDUCTOR MATERIALS - ION IMPLANTATION;
ANOMALOUS LEAKAGE CURRENT REDUCTION;
DRAIN-CURRENT MEASUREMENTS;
POLYCRYSTALLINE-SILICON THIN-FILM TRANSISTORS;
TRANSISTORS;
|
EID: 0023851207
PISSN: 07413106
EISSN: 15580563
Source Type: Journal
DOI: 10.1109/55.20401 Document Type: Article |
Times cited : (132)
|
References (4)
|