Surface-Charge Properties of Fluorine-Doped Lead Borosilicate Glass

IEEE Transactions on Electron Devices

Volumn 35, Issue 1, 1988, Pages 124-128

  Shimbo, Masaru ^a   Furukawa, Kazuyoshi ^a   Tanzawa, Katsujiro ^a   Higuchi, Toyoki ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS - MEASUREMENTS; GLASS - MATERIALS; SEMICONDUCTING SILICON - DOPING;

BIAS-TEMPERATURE (BT) STRESS; FLUORINE-DOPED LEAD BOROSILICATE GLASS; METAL-GLASS-SILICON CAPACITORS; SURFACE-CHARGE PROPERTIES;

SURFACES;

EID: 0023826020     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.2427     Document Type: Article

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