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Volumn 5, Issue 10, 1987, Pages 1351-1364

Multigigabit-per-Second Avalanche Photodiode Lightwave Receivers

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS; OPTICAL COMMUNICATION EQUIPMENT; SEMICONDUCTOR DIODES, AVALANCHE; TRANSISTORS, BIPOLAR; TRANSISTORS, FIELD EFFECT;

EID: 0023670639     PISSN: 07338724     EISSN: 15582213     Source Type: Journal    
DOI: 10.1109/JLT.1987.1075425     Document Type: Article
Times cited : (82)

References (69)
  • 2
    • 0022721130 scopus 로고
    • 8-Gbit/s transmission over 30 km of optical fiber
    • A. H. Gnauck, J. E. Bowers, and J. C. Campbell, “8-Gbit/s transmission over 30 km of optical fiber,” Electron Lett., vol. 22. pp. 600–602, 1986.
    • (1986) Electron Lett , vol.22 , pp. 600-602
    • Gnauck, A.H.1    Bowers, J.E.2    Campbell, J.C.3
  • 9
    • 0020190756 scopus 로고
    • Giga-bit/s optical receiver sensitivity and zero-dispersion single-mode fiber transmission at 1.55 μm
    • J. Yamada, A. Kawana, T. Miya. J. Nagai, and T. Kimura, “Giga-bit/s optical receiver sensitivity and zero-dispersion single-mode fiber transmission at 1.55 μm,” IEEE J. Quantum Electron., vol. QE-18, pp. 1537–1546, 1982.
    • (1982) IEEE J. Quantum Electron , vol.QE-18 , pp. 1537-1546
    • Yamada, J.1    Kawana, A.2    Miya, T.3    Nagai, J.4    Kimura, T.5
  • 10
    • 0019583051 scopus 로고
    • 2-Gbit/s optical trans mission experiments at 1.3 μm with 44-km single-mode fiber
    • J. L. Yamada, S. Machida, and T. Kimura, “2-Gbit/s optical trans mission experiments at 1.3 μm with 44-km single-mode fiber,” Electron. Lett., vol. 17, pp. 479–480, 1981.
    • (1981) Electron. Lett , vol.17 , pp. 479-480
    • Yamada, J.L.1    Machida, S.2    Kimura, T.3
  • 11
    • 0020167871 scopus 로고
    • Experiences with an optical long-haul 2.24-Gbit/s transmission system at a wavelength of 1.3 μm
    • W. Albrecht, G. Elze, B. Enning, G. Waif, and G. Wenke, “Experiences with an optical long-haul 2.24-Gbit/s transmission system at a wavelength of 1.3 μm,” Electron Lett., vol. 18, pp. 746–748, 1982.
    • (1982) Electron Lett , vol.18 , pp. 746-748
    • Albrecht, W.1    Elze, G.2    Enning, B.3    Waif, G.4    Wenke, G.5
  • 12
    • 0015650991 scopus 로고
    • Receiver design for digital fiber-optic communication systems, Part I and II
    • S. D. Personick, “Receiver design for digital fiber-optic communication systems, Part I and II,” Bell Syst. Tech. J., vol. 52, pp. 843–886, 1973.
    • (1973) Bell Syst. Tech. J , vol.52 , pp. 843-886
    • Personick, S.D.1
  • 13
    • 0001558518 scopus 로고
    • Receiver design for optical fiber communication systems
    • New York: Springer-Verlag, ch. 4.
    • R. G. Smith and S. D. Personick, “Receiver design for optical fiber communication systems,” in Semiconductor Devices for Optical Communication. New York: Springer-Verlag, 1980, ch. 4.
    • (1980) Semiconductor Devices for Optical Communication
    • Smith, R.G.1    Personick, S.D.2
  • 14
    • 0011589052 scopus 로고
    • Sensitivity of avalanche photodetcctor receivers for high-bit-rate long-wavelength optical communication systems
    • Lightwave Communications Technology. Orlando, FL: Academic
    • S. R. Forrest, “Sensitivity of avalanche photodetcctor receivers for high-bit-rate long-wavelength optical communication systems,” in Semiconductors and Semimetals, vol. 22: Lightwave Communications Technology. Orlando, FL: Academic, 1985, ch. 4.
    • (1985) Semiconductors and Semimetals , vol.22 , Issue.4
    • Forrest, S.R.1
  • 16
    • 0001292001 scopus 로고
    • InGaAsP heterojunction avalanche photodiodes with high avalanche gain
    • K. Nishida, K. Taguchi, and Y. Matsumoto, “InGaAsP heterojunction avalanche photodiodes with high avalanche gain,” Appl. Phys. Lett., vol. 35, pp. 251–253, 1979.
    • (1979) Appl. Phys. Lett , vol.35 , pp. 251-253
    • Nishida, K.1    Taguchi, K.2    Matsumoto, Y.3
  • 17
    • 0001714449 scopus 로고
    • Evidence of tunneling in reverse-bias III-V photodetector diodes
    • S. R. Forrest, M. DiDomenico, Jr., R. G. Smith, and H. J. Stocker, “Evidence of tunneling in reverse-bias III-V photodetector diodes,” Appl. Phys. Lett., vol. 36, pp. 580–582, 1980.
    • (1980) Appl. Phys. Lett , vol.36 , pp. 580-582
    • Forrest, S.R.1    DiDomenico, M.2    Smith, R.G.3    Stocker, H.J.4
  • 18
    • 84956260153 scopus 로고
    • Tunneling current in InGaAsP and optimum design for InGaAs/lnP avalanche photodiodes
    • H. Ando, H. Kanbe, M. Ito, and T. Kaneda, “Tunneling current in InGaAsP and optimum design for InGaAs/lnP avalanche photodiodes,” Japan J. Appl. Phys., vol. 19, pp. 1277–1280, 1980.
    • (1980) Japan J. Appl. Phys , vol.19 , pp. 1277-1280
    • Ando, H.1    Kanbe, H.2    Ito, M.3    Kaneda, T.4
  • 19
    • 0022129698 scopus 로고
    • Improved frequency response of InP/InGaAfiP/InGaAs avalanche photodiodes with separate absorption, grading, and multiplication regions
    • W. S. Holden, J. C. Campbell, J. F. Ferguson, A. G. Dentai, and Y. K. Jhee, “Improved frequency response of InP/InGaAfiP/InGaAs avalanche photodiodes with separate absorption, grading, and multiplication regions,” Electron. Lett., vol. 21, pp, 886–887, 1985.
    • (1985) Electron. Lett , vol.21 , pp. 886-887
    • Holden, W.S.1    Campbell, J.C.2    Ferguson, J.F.3    Dentai, A.G.4    Jhee, Y.K.5
  • 23
    • 0002498386 scopus 로고
    • Optical response time of In 0.53 Ga 0.47 As avalanche photodiodes
    • S. R. Forrest, O. K. Kim, and R. G. Smith, “Optical response time of In 0.53 Ga 0.47 As avalanche photodiodes,” Appl. Phys. Lett., vol. 41, pp. 95–98, 1932.
    • (1932) Appl. Phys. Lett , vol.41 , pp. 95-98
    • Forrest, S.R.1    Kim, O.K.2    Smith, R.G.3
  • 24
    • 0020815923 scopus 로고
    • High-performance avalanche photodiode with separate absorption grading, and multiplication regions
    • J. C. Campbell, A. G. Dentai, W. S. Holden, and B. L. Kasper, “High-performance avalanche photodiode with separate absorption grading, and multiplication regions,” Electron. Lett., vol. 18, pp. 818-820, 1983.
    • (1983) Electron. Lett , vol.18 , pp. 818-820
    • Campbell, J.C.1    Dentai, A.G.2    Holden, W.S.3    Kasper, B.L.4
  • 25
    • 0022152954 scopus 로고
    • Frequency response of InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption, grading, and multiplication regions
    • J. C. Campbell, W. S. Holden, G. I. Qua, and A. G. Dentai, “Frequency response of InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption, grading, and multiplication regions,” IEEE J. Quantum Electron., vol. QE-21, pp. 1743–1746, 1985.
    • (1985) IEEE J. Quantum Electron , vol.QE-21 , pp. 1743-1746
    • Campbell, J.C.1    Holden, W.S.2    Qua, G.I.3    Dentai, A.G.4
  • 26
    • 0019634694 scopus 로고
    • Excess noise and receiver sensitivity measurement of In 0.53 Ga 0.47 As/InP avalanche photodiodes
    • S. R. Forrest, G. F. Williams, O. K. Kim, and R. G. Smith, “Excess noise and receiver sensitivity measurement of In 0.53 Ga 0.47 As/InP avalanche photodiodes,” Electron. Lett., vol. 17, pp. 917–919, 1981.
    • (1981) Electron. Lett , vol.17 , pp. 917-919
    • Forrest, S.R.1    Williams, G.F.2    Kim, O.K.3    Smith, R.G.4
  • 27
    • 0021389990 scopus 로고
    • Reach-through type planar InGaAs/InP avalanche photodiode fabricated by continuous vapor phase epitaxy
    • H. Ando, Y. Yamauchi, and N. Susa, “Reach-through type planar InGaAs/InP avalanche photodiode fabricated by continuous vapor phase epitaxy,” IEEE J. Quantum Electron., vol. QE-20, pp. 256- 264 - 1984.
    • (1984) IEEE J. Quantum Electron , vol.QE-20 , pp. 256-264
    • Ando, H.1    Yamauchi, Y.2    Susa, N.3
  • 28
    • 0000928931 scopus 로고
    • Electron emission in intense electric fields
    • London
    • R. H. Fowler and L. Nordheim, “Electron emission in intense electric fields,” Proc. Roy. Soc. (London), vol. 119, pp. 173–181, 1928.
    • (1928) Proc. Roy. Soc , vol.119 , pp. 173-181
    • Fowler, R.H.1    Nordheim, L.2
  • 29
    • 0001062092 scopus 로고
    • Field and thermionic-field emission in Schottky barriers
    • F. A. Padovani and R. Stratton, “Field and thermionic-field emission in Schottky barriers,” Solid-State Electron., vol. 9, pp. 695–707, 1966.
    • (1966) Solid-State Electron , vol.9 , pp. 695-707
    • Padovani, F.A.1    Stratton, R.2
  • 30
    • 0016487320 scopus 로고
    • A simplified model for graded-gap heterostructures
    • D. T. Cheung, S. Y. Chiang, and G. L. Pearson, “A simplified model for graded-gap heterostructures.” Solid-State Electron., vol. 18, pp. 263–266, 1975.
    • (1975) Solid-State Electron , vol.18 , pp. 263-266
    • Cheung, D.T.1    Chiang, S.Y.2    Pearson, G.L.3
  • 31
    • 0021614252 scopus 로고
    • Psuedo-quatemary GalnAsP semiconductors: A new Ga 0. 47 In 0.53 As/InP graded gap superlattice and its applications to avalanche photodiodes
    • F. Capasso, H. M. Cox, A. L. Hutchinson, N. A. Olsson, and S. G. Hummel. “Psuedo-quatemary GalnAsP semiconductors: A new Ga 0. 47 In 0.53 As/InP graded gap superlattice and its applications to avalanche photodiodes,” Appl. Phys. Lett., vol. 45, pp. 1193—1195, 1984.
    • (1984) Appl. Phys. Lett , vol.45 , pp. 1193-1195
    • Capasso, F.1    Cox, H.M.2    Hutchinson, A.L.3    Olsson, N.A.4    Hummel, S.G.5
  • 32
    • 0019587378 scopus 로고
    • New type InGaAs/InP heterostructure avalanche photodiode with buffer laver
    • Y. Matsushima, K. Sakai, and Y. Noda, “New type InGaAs/InP heterostructure avalanche photodiode with buffer laver,” IEEE Electron. Dev. Lett., vol. EDL-2, pp. 179–181, 1931.
    • (1931) IEEE Electron. Dev. Lett , vol.EDL-2 , pp. 179-181
    • Matsushima, Y.1    Sakai, K.2    Noda, Y.3
  • 33
    • 0020191304 scopus 로고
    • High-speed response InGaAs/InP heterostructure avalanche photodiode with InGaAsP buffer layers
    • Y. Matsushima, A. Akiba, K. Sakai, K. Kushiro, Y. Noda, and K. Utaka, “High-speed response InGaAs/InP heterostructure avalanche photodiode with InGaAsP buffer layers,” Electron. Lett., vol. 18, pp. 945–946, 1982.
    • (1982) Electron. Lett , vol.18 , pp. 945-946
    • Matsushima, Y.1    Akiba, A.2    Sakai, K.3    Kushiro, K.4    Noda, Y.5    Utaka, K.6
  • 34
    • 0021753833 scopus 로고
    • High-speed planar-structure InP/InGaAsP/InGaAs avalanche photodiode grown by VPE
    • Y. Sugimoto, T. Torikai, K. Makita, H. Ishihara, K. Minemura, and K. Taguchi, “High-speed planar-structure InP/InGaAsP/InGaAs avalanche photodiode grown by VPE,” Electron. Lett., vol. 20, pp. 653–654, 1984.
    • (1984) Electron. Lett , vol.20 , pp. 653-654
    • Sugimoto, Y.1    Torikai, T.2    Makita, K.3    Ishihara, H.4    Minemura, K.5    Taguchi, K.6
  • 35
    • 84939339360 scopus 로고
    • Multiplication-dependent frequency responses of InP/InGaAs avalanche photo-diode
    • K. Yasuda, T. Mikawa, Y. Kishi, and T. Kaneda, “Multiplication-dependent frequency responses of InP/InGaAs avalanche photo-diode” Electron, Lett., vol. 20, pp. 373–374, 1984.
    • (1984) Electron, Lett , vol.20 , pp. 373-374
    • Yasuda, K.1    Mikawa, T.2    Kishi, Y.3    Kaneda, T.4
  • 37
    • 84948612250 scopus 로고    scopus 로고
    • High-speed InP/InGaAsP/InGaAs avalanche photodiodes grown by chemical beam epitaxy
    • to be published
    • J. C. Campbe II, W. T. Tsang, G. J. Qua, and B. C. Johnson, “High-speed InP/InGaAsP/InGaAs avalanche photodiodes grown by chemical beam epitaxy,” IEEE J. Quantum Electron., to be published.
    • IEEE J. Quantum Electron
    • Campbe, J.C.1    Tsang, W.T.2    Qua, G.J.3    Johnson, B.C.4
  • 38
    • 0022113672 scopus 로고
    • InGaAs photodctec tors with modulation response to millimeter wavelengths
    • J. E. Bowers, C. A. Burrus, and R. J. McCoy, “InGaAs photodctec tors with modulation response to millimeter wavelengths,” Electron. Lett., vol. 21, pp, 812–814, 1985.
    • (1985) Electron. Lett , vol.21 , pp. 812-814
    • Bowers, J.E.1    Burrus, C.A.2    McCoy, R.J.3
  • 39
    • 0000512292 scopus 로고
    • Avalanche-photodiode frequency response
    • E. B. Emmons, “Avalanche-photodiode frequency response,” J. Appl. Phys., vol. 38, pp. 3705–3714, 1967.
    • (1967) J. Appl. Phys , vol.38 , pp. 3705-3714
    • Emmons, E.B.1
  • 40
    • 0020103265 scopus 로고
    • The graded bandgap multilayer avalanche photodiode: A new low-noise detector
    • G. F. Williams, F. Capasso, and W. T. Tsang, “The graded bandgap multilayer avalanche photodiode: A new low-noise detector,” IEEE Electron. Dev. Lett., vol. EDL-3, pp. 71-73, 1982.
    • (1982) IEEE Electron. Dev. Lett , vol.EDL-3 , pp. 71-73
    • Williams, G.F.1    Capasso, F.2    Tsang, W.T.3
  • 42
    • 0000745905 scopus 로고
    • Ionization coefficients measured in abrupt InP junctions
    • I. Umeba, A. N. M. M. Choudhury, and P. N. Robson, “Ionization coefficients measured in abrupt InP junctions,” Appl. Phys. Lett., vol. 36, pp. 302–303, 1980.
    • (1980) Appl. Phys. Lett , vol.36 , pp. 302-303
    • Umeba, I.1    Choudhury, A.N.M.M.2    Robson, P.N.3
  • 43
    • 0021463664 scopus 로고
    • Low-dark-current low-voltage 1.3-1.6 μ m avalanche photodiode with high-low electric field profile and separate absorption and multiplication regions by molecular beam epitaxy
    • F. Capasso, A. Y. Cho, and P. W. Foy, “Low-dark-current low-voltage 1.3-1.6 μ m avalanche photodiode with high-low electric field profile and separate absorption and multiplication regions by molecular beam epitaxy,” Electron. Lett., vol. 20, pp. 635–637, 1984.
    • (1984) Electron. Lett , vol.20 , pp. 635-637
    • Capasso, F.1    Cho, A.Y.2    Foy, P.W.3
  • 44
    • 0021441107 scopus 로고
    • Receiver design for high-speed optical-fiber systems
    • T. V. Muoi, “Receiver design for high-speed optical-fiber systems,” J. Lightwave Technol., vol. LT-2, pp. 243–267, 1984,
    • (1984) J. Lightwave Technol , vol.LT-2 , pp. 243-267
    • Muoi, T.V.1
  • 45
    • 0022247920 scopus 로고
    • Optical receivers for lightwave communications systems
    • m. Brain and T. P. Lee, “Optical receivers for lightwave communications systems,” J. Lightwave Technol., vol. LT-3, pp. 1281–1300, 1985.
    • (1985) J. Lightwave Technol , vol.LT-3 , pp. 1281-1300
    • Brain, m.1    Lee, T.P.2
  • 46
    • 84937350176 scopus 로고
    • Thermal noise in field-effect transistors
    • A. van der Ziel, “Thermal noise in field-effect transistors,” Proc. IRE, vol. 50, pp. 1808–1812, 1962.
    • (1962) Proc. IRE , vol.50 , pp. 1808-1812
    • van der Ziel, A.1
  • 47
    • 84938443557 scopus 로고
    • Gate noise in field effect transistors at moderately high frequencies
    • A. van der Ziel, “Gate noise in field effect transistors at moderately high frequencies,” Proc. IEEE, vol. 57, pp. 461–467, 1963.
    • (1963) Proc. IEEE , vol.57 , pp. 461-467
    • van der Ziel, A.1
  • 50
    • 0015346425 scopus 로고
    • Noise behavior of GaAs field-effect transistors with short gate lengths
    • W. Baechtold, “Noise behavior of GaAs field-effect transistors with short gate lengths,” IEEE Trans. Electron Devices, vol. ED-19, pp. 674–680, 1972.
    • (1972) IEEE Trans. Electron Devices , vol.ED-19 , pp. 674-680
    • Baechtold, W.1
  • 51
    • 0016129670 scopus 로고
    • Input amplifiers for optical PCM repeaters
    • J. E. Goell, “Input amplifiers for optical PCM repeaters,” Bell Syst. Tech. J., vol. 53, pp. 1771–1793, 1974.
    • (1974) Bell Syst. Tech. J , vol.53 , pp. 1771-1793
    • Goell, J.E.1
  • 52
    • 0019595916 scopus 로고
    • Noise caused by GaAs MESFET's in optical receivers
    • K. Ogawa, “Noise caused by GaAs MESFET's in optical receivers,” Bell Syst. Tech. J., vol. 60, pp. 923–928, 1981.
    • (1981) Bell Syst. Tech. J , vol.60 , pp. 923-928
    • Ogawa, K.1
  • 53
    • 84922644221 scopus 로고
    • Multiplication noise in uniform avalanche diodes
    • R. J. McIntyre, “Multiplication noise in uniform avalanche diodes,” IEEE Trans. Electron Devices, vol. ED-13, pp. 164–168, 1966,
    • (1966) IEEE Trans. Electron Devices , vol.ED-13 , pp. 164-168
    • McIntyre, R.J.1
  • 54
    • 0021372876 scopus 로고
    • Gain-bandwidth-limited response in long-wavelength avalanche photodiodes
    • S. R. Forrest, “Gain-bandwidth-limited response in long-wavelength avalanche photodiodes,” J. Lightwave Technol., vol. LT-2, pp. 34–39, 1984.
    • (1984) J. Lightwave Technol , vol.LT-2 , pp. 34-39
    • Forrest, S.R.1
  • 55
    • 0022027471 scopus 로고
    • Effect of avalanche build-up time on avalanche photodiode sensitivity
    • H. Ando and H. Kanbe, “Effect of avalanche build-up time on avalanche photodiode sensitivity,” IEEE J. Quantum Electron., vol. QE-21, pp. 251–255, 1985.
    • (1985) IEEE J. Quantum Electron , vol.QE-21 , pp. 251-255
    • Ando, H.1    Kanbe, H.2
  • 56
    • 0017022706 scopus 로고
    • Avalanche buildup time of silicon reach-through photodiodes
    • T. Kaneda, H. Takanashi, H. Matsumoto, and T. Yamaoka, “Avalanche buildup time of silicon reach-through photodiodes,” J. Appl. Phys., vol. 47, pp. 4960-4963, 1976.
    • (1976) J. Appl. Phys , vol.47 , pp. 4960-4963
    • Kaneda, T.1    Takanashi, H.2    Matsumoto, H.3    Yamaoka, T.4
  • 57
    • 0019076176 scopus 로고
    • Temporal and frequency response of avalanche photodiodes from noise measurements
    • T. Andersson, A. R. Johnston, and H. Eklund, “Temporal and frequency response of avalanche photodiodes from noise measurements,” Appl. Opt., vol. 19, pp. 3496–3499, 1980.
    • (1980) Appl. Opt , vol.19 , pp. 3496-3499
    • Andersson, T.1    Johnston, A.R.2    Eklund, H.3
  • 58
    • 0022739237 scopus 로고
    • Avalanche buildup time of InP/lnGaAsP/InGaAs avalanche photodiodes with separate absorption, grading, and multiplication regions
    • Y. K. Jhee, J. C. Campbell, J. F. Ferguson, A. G. Dentai, and W. S. Holden, “Avalanche buildup time of InP/lnGaAsP/InGaAs avalanche photodiodes with separate absorption, grading, and multiplication regions,” IEEE J. Quantum Electron., vol. QE-22, pp. 753–755, 1986.
    • (1986) IEEE J. Quantum Electron , vol.QE-22 , pp. 753-755
    • Jhee, Y.K.1    Campbell, J.C.2    Ferguson, J.F.3    Dentai, A.G.4    Holden, W.S.5
  • 62
    • 0022217041 scopus 로고
    • 4-Gbit/s modulation experiments for long-wavelength region optical fiber transmission
    • San Diego, CA
    • I. Takano, T. Iwakami, I. Mito, and Y. Tashiro, “4-Gbit/s modulation experiments for long-wavelength region optical fiber transmission,” in Tech. Dig. OFC'85 (San Diego, CA), 1985.
    • (1985) Tech. Dig. OFC'85
    • Takano, I.1    Iwakami, T.2    Mito, I.3    Tashiro, Y.4
  • 63
    • 0021426289 scopus 로고
    • Monolithic integrated amplifiers for a gigabit optical repeater
    • K. Iwashita, N. Ohta, Y. Akazawa, N. Ishihara, and S. Konaka, “Monolithic integrated amplifiers for a gigabit optical repeater,” Electron. Lett., vol. 20, pp. 470–471, 1984.
    • (1984) Electron. Lett , vol.20 , pp. 470-471
    • Iwashita, K.1    Ohta, N.2    Akazawa, Y.3    Ishihara, N.4    Konaka, S.5
  • 64
    • 0023043582 scopus 로고
    • Cabled-fiber 1.6-Gbit/s 1550-nm transmission experiment
    • S. Lumish and F. T. Stone, “Cabled-fiber 1.6-Gbit/s 1550-nm transmission experiment,” Electron. Lett., vol. 22, pp. 1247–1248, 1986.
    • (1986) Electron. Lett , vol.22 , pp. 1247-1248
    • Lumish, S.1    Stone, F.T.2
  • 65
    • 0021477349 scopus 로고
    • Bipolar monolithic amplifiers for a gigabit optical repeater
    • M. Ohara, Y. Akazawa, N. Ishihara, and S. Konaka, “Bipolar monolithic amplifiers for a gigabit optical repeater,” IEEE J. Solid-State Circuits, vol. SC-19, pp. 491–497, 1984.
    • (1984) IEEE J. Solid-State Circuits , vol.SC-19 , pp. 491-497
    • Ohara, M.1    Akazawa, Y.2    Ishihara, N.3    Konaka, S.4
  • 66
    • 0021510045 scopus 로고
    • PINFET hybrid optical receivers for 1.2-Gbit/s transmission systems at 1.3- and 1.55- μ m wavelength
    • M. C. Brain, P. P. Smyth, D. R. Smith, B. R. White, and P. J. Chidgey, “PINFET hybrid optical receivers for 1.2-Gbit/s transmission systems at 1.3- and 1.55- μ m wavelength,” Electron, Lett., vol. 20, pp. 894–896, 1984.
    • (1984) Electron, Lett , vol.20 , pp. 894-896
    • Brain, M.C.1    Smyth, P.P.2    Smith, D.R.3    White, B.R.4    Chidgey, P.J.5
  • 67
    • 0022216858 scopus 로고
    • The effect of nonuniform gain on the multiplication noise of InP/InGaAsP/InGaAs avalanche photodiodes
    • Y. K. Jhee, J. C. Campbell, W. S. Holden, A. G. Dentai, and J. K. Plourde, “The effect of nonuniform gain on the multiplication noise of InP/InGaAsP/InGaAs avalanche photodiodes,” IEEE J. Quantum Electron., vol. QE-21, pp. 1858–1861, 1985.
    • (1985) IEEE J. Quantum Electron , vol.QE-21 , pp. 1858-1861
    • Jhee, Y.K.1    Campbell, J.C.2    Holden, W.S.3    Dentai, A.G.4    Plourde, J.K.5
  • 68
    • 84948588953 scopus 로고
    • Extremely sensitive direct detection receiver for laser communication
    • Baltimore, MD
    • T. V. Muoi, “Extremely sensitive direct detection receiver for laser communication,” in Tech. Dig. CLEO'87 (Baltimore, MD), 1987.
    • (1987) Tech. Dig. CLEO'87
    • Muoi, T.V.1
  • 69
    • 0020750230 scopus 로고
    • Receiver design for digital fiberoptic transmission systems using Manchester (biphase) coding
    • T. V. Muoi, “Receiver design for digital fiberoptic transmission systems using Manchester (biphase) coding,” IEEE Trans. Commun., vol. COM-31, pp. 608–619, 1983.
    • (1983) IEEE Trans. Commun , vol.COM-31 , pp. 608-619
    • Muoi, T.V.1


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