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Volumn 23, Issue 12, 1987, Pages 2152-2158

Growth and characterization of bi12sio20 films by metalorganic chemical vapor deposition

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS - EPITAXIAL GROWTH; ELECTROOPTICAL MATERIALS - CHEMICAL VAPOR DEPOSITION; PHOTOCONDUCTING MATERIALS - CHEMICAL VAPOR DEPOSITION; PHOTOCONDUCTIVITY - MEASUREMENTS;

EID: 0023670341     PISSN: 00189197     EISSN: 15581713     Source Type: Journal    
DOI: 10.1109/JQE.1987.1073299     Document Type: Article
Times cited : (10)

References (16)
  • 1
    • 0017991504 scopus 로고
    • The PROM-theory and applications for the Pockets readout optical modulator.
    • B.A. Horwitz and F.J. Corbett, 'The PROM-theory and applications for the Pockets readout optical modulator.” Opt. Eng., vol. 17, no. 4, pp. 353–364, 1978.
    • (1978) Opt. Eng. , vol.17 , Issue.4 , pp. 353-364
    • Horwitz, B.A.1    Corbett, F.J.2
  • 2
    • 0001737365 scopus 로고
    • High sensitivity read-write volume holographic storage in Bi12SiO20 crystals
    • J, P. Huignard and F. Micheron, “High sensitivity read-write volume holographic storage in Bi12SiO20 crystals,” Appl. Opl., vol. 29, pp. 591–593, 1976.
    • (1976) Appl. Opl. , vol.29 , pp. 591-593
    • Huignard, J.P.1    Micheron, F.2
  • 3
    • 0018294191 scopus 로고
    • Phase conjugate wavefront generation via real time holography in Bi12SiO20 crystals
    • J.P. Huignard, J.P. Herriau, P. Aubourg, and E. Spitz, “Phase conjugate wavefront generation via real time holography in Bi12SiO20 crystals,” Opt. Lett., vol. 4, pp. 21–23, 1979.
    • (1979) Opt. Lett. , vol.4 , pp. 21-23
    • Huignard, J.P.1    Herriau, J.P.2    Aubourg, P.3    Spitz, E.4
  • 4
    • 0021860383 scopus 로고
    • Physical characterization of the photorefractive incoherent-to-coherent optical converter
    • A, Marrakchi, A.R. Tanguay, Jr., J. Yu, and D. Psaltis, “Physical characterization of the photorefractive incoherent-to-coherent optical converter,” Opt. Eng., vol. 24, no. 1, pp. 124–131, 1985.
    • (1985) Opt. Eng. , vol.24 , Issue.1 , pp. 124-131
    • Marrakchi, A.1    Tanguay, A.R.2    Yu, J.3    Psaltis, D.4
  • 5
    • 36749113958 scopus 로고
    • Crystal structure and absolute piezoelectric d14 coefficient in laevorotatory Bi12SiO20
    • S.C. Abrahams, J.L. Bernstein, and C. Svensson, “Crystal structure and absolute piezoelectric d14 coefficient in laevorotatory Bi12SiO20,” J. Chem. Phys., vol. 71, no. 2, pp. 788–792, 1979.
    • (1979) J. Chem. Phys. , vol.71 , Issue.2 , pp. 788-792
    • Abrahams, S.C.1    Bernstein, J.L.2    Svensson, C.3
  • 6
    • 36849097600 scopus 로고
    • Electrical and optical propreties of Bi12SiO20
    • R.E. Aldrich, S.L. Hou, and M.L. Harvill, “Electrical and optical propreties of Bi12SiO20,.” J. Appl. Phys., vol. 42, no, 1, pp. 493–494, 1971.
    • (1971) J. Appl. Phys. , vol.42 , Issue.1 , pp. 493-494
    • Aldrich, R.E.1    Hou, S.L.2    Harvill, M.L.3
  • 7
    • 0017723466 scopus 로고
    • Pulling large bismuth-silicon-oxide crystals
    • J.C. Brice, M.J. Hight, O.F. Hill, and P.A.C. Whifftn, “Pulling large bismuth-silicon-oxide crystals,” Philips Tech Rev, vol. 37, no. 9/10, pp. 250–262, 1977.
    • (1977) Philips Tech Rev , vol.37 , Issue.9/10 , pp. 250-262
    • Brice, J.C.1    Hight, M.J.2    Hill, O.F.3    Whifftn, P.A.C.4
  • 8
    • 0001073590 scopus 로고
    • The Czochralski growth of optical quality bismuth silicon oxide (Bi12SiO20)
    • A.R. Tanguay, Jr., S. Mroczkowski, and R.C. Barker, “The Czochralski growth of optical quality bismuth silicon oxide (Bi12SiO20),” J. Cryst. Growth, vol. 42, pp. 431–434, 1977.
    • (1977) J. Cryst. Growth , vol.42 , pp. 431-434
    • Tanguay, A.R.1    Mroczkowski, S.2    Barker, R.C.3
  • 9
    • 0022191184 scopus 로고
    • Epitaxial growth of Bi12SiO20 films by chemical vapor deposition
    • pp. L954-L955
    • Y. Nagao and Y. Mimura. “Epitaxial growth of Bi12SiO20 films by chemical vapor deposition,” Japan. J. Appl, Phys., vol. 24, no. 12, pp. L954-L955, 1985.
    • (1985) Japan. J. Appl, Phys. , vol.24 , Issue.12
    • Nagao, Y.1    Mimura, Y.2
  • 10
    • 0001279182 scopus 로고
    • Growth of ZnO films by the plasma-enhanced metalorganic chemical vapor deposition technique
    • M. Shimizu, Y. Matsuda, T. Shiosaki, and A. Kawabata, “Growth of ZnO films by the plasma-enhanced metalorganic chemical vapor deposition technique,” J. Cryst. Growth, vol. 71, no. 1, pp. 209–219, 1985.
    • (1985) J. Cryst. Growth , vol.71 , Issue.1 , pp. 209-219
    • Shimizu, M.1    Matsuda, Y.2    Shiosaki, T.3    Kawabata, A.4
  • 11
    • 30244452983 scopus 로고
    • Structural studies of some body-centered cubic phases of mixed oxides involving Bi2O3: The structures of Bi25FeO40 and Bi38ZnO60
    • D.C. Craig and N.C. Stephenson, “Structural studies of some body-centered cubic phases of mixed oxides involving Bi2O3: The structures of Bi25FeO40 and Bi38ZnO60,” J. Solid Slate Chem., vol. 15, pp. 1–8, 1975.
    • (1975) J. Solid Slate Chem. , vol.15 , pp. 1-8
    • Craig, D.C.1    Stephenson, N.C.2
  • 12
    • 0000515474 scopus 로고
    • Polymorphism of bismuth sesquioxide. II. Effect of oxide additions on the polymorphism of Bi2O3
    • E. M, Levin and R.S. Roth, “Polymorphism of bismuth sesquioxide. II. Effect of oxide additions on the polymorphism of Bi2O3,” J. Res. Nat. Bur. Stand. A, vol. 68A, no. 2, pp. 197–206, 1964.
    • (1964) J. Res. Nat. Bur. Stand. A , vol.68 A , Issue.2 , pp. 197-206
    • Levin, E.M.1    Roth, R.S.2
  • 13
    • 0014614521 scopus 로고
    • The use of metal-organics in the preparation of semiconductor materials
    • H.M. Manasevit and W.I. Simpson, “The use of metal-organics in the preparation of semiconductor materials,” J. Electrochem. Soc., vol. 116, no. 12, pp. 1725–1732, 1969.
    • (1969) J. Electrochem. Soc. , vol.116 , Issue.12 , pp. 1725-1732
    • Manasevit, H.M.1    Simpson, W.I.2
  • 14
    • 0642299515 scopus 로고
    • MOCVD growth and characterization of high purity InP
    • L.D. Zhu, K.T. Chan, and J.M. Ballantyne, “MOCVD growth and characterization of high purity InP,” J. Cryst. Growth, vol. 73, no. 1, pp. 83–95, 1985.
    • (1985) J. Cryst. Growth , vol.73 , Issue.1 , pp. 83-95
    • Zhu, L.D.1    Chan, K.T.2    Ballantyne, J.M.3
  • 15
    • 0001406513 scopus 로고
    • Growth kinetics in the MOVPE of ZnSe on GaAs using zinc and selenium alkyls
    • nos, 1-3
    • H. Mitsuhashi, I, Mitsuishi, and H. Kukimoto, “Growth kinetics in the MOVPE of ZnSe on GaAs using zinc and selenium alkyls,” J. Cryst. Growth, vol. 77, nos, 1-3, pp. 219–222, 1986.
    • (1986) J. Cryst. Growth , vol.77 , pp. 219-222
    • Mitsuhashi, H.1    Mitsuishi, I.2    Kukimoto, H.3
  • 16
    • 84989711060 scopus 로고
    • Properties of pure and doped Bi12GeO20 and Bi12SiO20 crystals
    • B.C. Grabmaier and R. Oberschmid, “Properties of pure and doped Bi12GeO20 and Bi12SiO20 crystals,” Phys. Stat. Sol., (a), vol. 96, pp. 199–210, 1986.
    • (1986) Phys. Stat. Sol., (a) , vol.96 , pp. 199-210
    • Grabmaier, B.C.1    Oberschmid, R.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.