High-efficieimcy quasimicrowave gaas fet power amplifier

Electronics Letters

Volumn 23, Issue 10, 1987, Pages 512-513

  Nojima, T ^a   Nishiki, S ^a   Chiba, K ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Microwave circuits and systems; Power semiconductor devices

Indexed keywords

AMPLIFIERS, MICROWAVE; SEMICONDUCTING GALLIUM ARSENIDE; TRANSISTORS, FIELD EFFECT;

FET POWER AMPLIFIER; HIGH-EFFICIENCY; POWER-ADDED EFFICIENCY; TERMINATING CIRCUIT;

AMPLIFIERS, POWER TYPE;

EID: 0023647194     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19870370     Document Type: Article

References (2)

1. TYLER, v. J.: ‘A new high efficiency high power amplifier’, Marconi Rev., 1958, 21, pp. 96-109
2. CHIBA, K., and KANMURI, N.: ‘GaAs FET module with high efficiency’, Electron. Lett., 1983, 19, pp. 1025-1026