POLYEMITTER BIPOLAR HOT CARRIER EFFECTS IN AN ADVANCED BICMOS TECHNOLOGY.

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1987, Pages 182-185

  Joshi, S P ^a   Lahri, R ^a   Lage, C ^a  

^a FAIRCHILD SEMICONDUCTOR   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MOS - DEGRADATION;

BICMOS TECHNOLOGY; ELECTRIC STRESS CONDITIONS; HOT CARRIER EFFECTS; POLYEMITTER BIPOLAR TRANSISTOR;

TRANSISTORS, BIPOLAR;

EID: 0023604280     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/iedm.1987.191382     Document Type: Conference Paper

References (9)