FORMATION OF ARSENIC-IMPLANTED PN JUNCTIONS USING HIGH VACUUM ION IMPLANTER.

Conference on Solid State Devices and Materials

Volumn , Issue , 1987, Pages 299-302

  Ohmi, T ^a   Masuda, K ^a   Hashimoto, T ^a   Shibata, T ^a   Kato, M ^a   Ishihara, Y ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR MATERIALS - ION IMPLANTATION;

HIGH VACUUM ION IMPLANTER; LOW LEAKAGE CURRENT; LOW TEMPERATURE ANNEAL; PN JUNCTIONS; REVERSE CURRENT; ULTRA CLEAN TECHNOLOGY;

SEMICONDUCTOR DEVICES;

EID: 0023599256     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.7567/ssdm.1987.c-7-5     Document Type: Conference Paper

References (4)