SELECTIVE CVD TUNGSTEN SILICIDE FOR VLSI APPLICATIONS.

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1987, Pages 213-216

  Ohba, Takayuki ^a   Inoue, Shin ichi ^a   Maeda, Mamoru ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES - METALLIZING; TUNGSTEN COMPOUNDS - CHEMICAL VAPOR DEPOSITION;

BARRIER METAL; CONTACT METALLIZATION; SELECTIVE CVD; TUNGSTEN SILICIDE;

INTEGRATED CIRCUITS, VLSI;

EID: 0023591466     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/iedm.1987.191390     Document Type: Conference Paper

References (9)