SEU TOLERANT MEMORY CELL DERIVED FROM FUNDAMENTAL STUDIES OF SEU MECHANISMS IN SRAM.

IEEE Transactions on Nuclear Science

Volumn NS-34, Issue 6, 1987, Pages

  Weaver, H T ^a   Axness, C L ^a   McBrayer, J D ^a   Browning, J S ^a   Fu, J S ^a   Ochoa Jr , A ^a   Koga, R ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE, DIGITAL - RANDOM ACCESS; IONS;

INTEGRATED-CIRCUIT RADIATION EFFECTS; ION RADIATION EFFECTS; RANDOM-ACCESS MEMORIES; SEU HARDENING CONCEPT; SINGLE EVENT UPSET (SEU);

DATA STORAGE, SEMICONDUCTOR;

EID: 0023589974     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (14)