HIGH PERFORMANCE SAMPLE-AND-HOLD IMPLEMENTED WITH GAAS/ALGAAS HETEROJUNCTION BIPOLAR TRANSISTOR TECHNOLOGY.

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1987, Pages 623-626

  Gorman, G M ^a   Camou, J B ^a   Oki, A K ^a   Oyama, B K ^a   Kim, M E ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DATA CONVERSION, ANALOG TO DIGITAL; INTEGRATED CIRCUITS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE;

CURRENT-MODE LOGIC; HBT SAMPLE-AND-HOLD CIRCUIT; HETEROJUNCTION BIPOLAR TRANSISTOR TECHNOLOGY;

TRANSISTORS, BIPOLAR;

EID: 0023569122     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/iedm.1987.191504     Document Type: Conference Paper

References (5)