HIGH PERFORMANCE HALF-MICRON PMOSFETS WITH 0. 1 mu m SHALLOW p** plus -n JUNCTION UTILIZING SELECTIVE SILICON GROWTH AND RAPID THERMAL ANNEALING.

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1987, Pages 590-593

  Shibata, Hideki ^a   Suizu, Yasumasa ^a   Samata, Shuichi ^a   Matsuno, Tadashi ^a   Hashimoto, Kazuhiko ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HEAT TREATMENT - ANNEALING; SEMICONDUCTING SILICON - GROWTH;

FLUORINE INDUCED DEFECTS; HALF-MICRON PMOSFETS; RAPID THERMAL ANNEALING; SELECTIVE SILICON GROWTH (SSG); SOURCE/DRAIN (S/D) STRUCTURES;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0023563048     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)