HIGHLY RELIABLE SELECTIVE CVD-W UTILIZING SiH//4 REDUCTION FOR VLSI CONTACTS.

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1987, Pages 217-220

  Kotani, H ^a   Tsutumi, T ^a   Komori, J ^a   Nagao, S ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SILANES - APPLICATIONS; TUNGSTEN AND ALLOYS - CHEMICAL VAPOR DEPOSITION;

CHEMICAL VAPOR DEPOSITED TUNGSTEN; SELECTIVE CVD; SILANE REDUCTION;

INTEGRATED CIRCUITS, VLSI;

EID: 0023563043     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)