0. 8 mu m Bi-CMOS TECHNOLOGY WITH HIGH F//T ION-IMPLANTED EMITTER BIPOLAR TRANSISTOR.

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1987, Pages 28-31

  Iwai, H ^a   Sasaki, G ^a   Unno, Y ^a   Niitsu, Y ^a   Norishima, M ^a   Sugimoto, Y ^a   Kanzaki, K ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MOS - FABRICATION; TRANSISTORS, BIPOLAR - ION IMPLANTATION;

ION IMPLANTED EMITTER TRANSISTOR; OPTIMIZED BIPOLAR TRANSISTOR; SUBMICRON BIPOLAR-CMOS TECHNOLOGY;

SEMICONDUCTOR DEVICES, BIPOLAR;

EID: 0023548190     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)