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Volumn , Issue , 1987, Pages 230-233
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INCREASED THROUGHPUT FOR THE TESTING AND REPAIR OF RAMS WITH REDUNDANCY.
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Author keywords
[No Author keywords available]
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Indexed keywords
COMPUTER AIDED ENGINEERING;
DATA STORAGE SEMICONDUCTOR - DEFECTS;
INTEGRATED CIRCUIT TESTING;
FAULTY MEMORY CELLS;
REDUNDANT RANDOM ACCESS MEMORY(RRAM);
REPAIRABILITY;
DATA STORAGE, DIGITAL;
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EID: 0023545875
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (12)
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References (6)
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