REEVALUATION OF WORST-CASE POSTIRRADIATION RESPONSE FOR HARDENED MOS TRANSISTORS.

IEEE Transactions on Nuclear Science

Volumn NS-34, Issue 6, 1987, Pages

  Fleetwood, D M ^a   Dressendorfer, P V ^a   Turpin, D C ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS - RADIATION EFFECTS;

MOS TRANSISTORS; POSTIRRADIATION RSPONSE; RADIATION HARDENED N-CHANNEL TRANSISTOR;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0023542207     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (33)