HIGH SPEED 1K multiplied by 4-BIT STATIC RAM USING 0. 5 mu M-GATE HEMT.

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1987, Pages 177-180

  Notomi, S ^a   Awano, Y ^a   Kosugi, M ^a   Nagata, T ^a   Kosemura, K ^a   Ono, M ^a   Kobayashi, N ^a   Ishiwari, H ^a   Odani, K ^a   Mimura, T ^a   Abe, M ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE, DIGITAL - RANDOM ACCESS; TRANSISTORS - APPLICATIONS;

HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); STATIC RAM; SUBMICRON HEMT TECHNOLOGY;

INTEGRATED CIRCUITS, DIGITAL;

EID: 0023541902     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)