LOW SURFACE RECOMBINATION VELOCITIES ON DOPED SILICON AND THEIR IMPLICATIONS FOR POINT CONTACT SOLAR CELLS.

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 1987, Pages 1168-1173

  King, R R ^a   Sinton, R A ^a   Swanson, R M ^a   Ciszek, T F ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; ELECTRIC MEASUREMENTS - CURRENT; SEMICONDUCTING SILICON - DOPING; SEMICONDUCTOR DEVICES - TRANSIENTS;

DOPANT CONCENTRATION; POINT CONTACT SOLAR CELLS; SURFACE RECOMBINATION VELOCITIES;

SOLAR CELLS;

EID: 0023536053     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)