On Charge Nonconservation in FET's

IEEE Transactions on Electron Devices

Volumn 34, Issue 12, 1987, Pages 2565-2568

  Smith, I W ^a   Statz, H ^a   Haus, H A ^b   Pucel, R A ^a  

^a RAYTHEON COMPANY   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC SPACE CHARGE;

CHARGE NONCONSERVATION; SOURCE AND DRAIN CHARGES; SOURCE-DRAIN VOLTAGES NEAR ZERO;

TRANSISTORS, FIELD EFFECT;

EID: 0023531679     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1987.23353     Document Type: Article

References (3)

1. D. Divekar, “Comments on GaAs FET device and circuit simulation in SPICE”, IEEE Trans. Electron Devices, this issue, pp. 2564-2565.
2. H. Statz, P. Newman, I. W. Smith, R. A. Pucel, and H. A. Haus, “GaAs FET device and circuit simulation in SPICE”, IEEE Trans. Electron Devices, vol. ED-34, pp. 160-169, Feb. 1987.
3. P. Yang, B. Epler, and P. Chatterjee, “An investigation of the charge conservation problem for MOSFET circuit simulation”, IEEE J. Solid-State Circuits, vol. SC-18, no. 1, pp. 128-138, Feb. 1983.