Liquid phase epitaxy of GaAs quantum well structures

Journal of Crystal Growth

Volumn 85, Issue 1-2, 1987, Pages 194-198

  Bantien, F ^a   Kelting, K ^a   Bauser, E ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS - EPITAXIAL GROWTH; PHOTOLUMINESCENCE; SEMICONDUCTOR DEVICES - HETEROJUNCTIONS;

LIQUID PHASE EPITAXY; QUANTUM WELLS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0023456628     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(87)90222-3     Document Type: Article

References (13)

1. A 1.3 µm InGaAsP/InP Multiquantum Well Laser Grown by LPE
2. Quantum States of Confined Carriers in Very Thin Al_{x}Ga_{1-x}As-GaAs-Al_{x}Ga_{1-x}As Heterostructures
3. Room temperature excitonic nonlinear absorption and refraction in GaAs/AlGaAs multiple quantum well structures