SUBBREAKDOWN DRAIN LEAKAGE CURRENT IN MOSFET.

Electron device letters

Volumn EDL-8, Issue 11, 1987, Pages 515-517

  Chen, J ^a   Chan, T Y ^a   Chen, I C ^a   Ko, P K ^a   Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC MEASUREMENTS - CURRENT;

DRAIN LEAKAGE CURRENT DETECTION; DRAIN/GAIN OVERLAP REGION; SUBBREAKDOWN LEAKAGE;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0023454470     PISSN: 01938576     EISSN: None     Source Type: Journal    
DOI: 10.1109/edl.1987.26713     Document Type: Article

References (5)